Nanoscale inorganic materials such as quantum dots (0-dimensional) and one-dimensional
(1D) structures, such as nanowires, nanobelts and nanotubes, have gained tremendous …

This review summarizes recent research on GaN nanostructures for light-emitting diode
(LED) applications. GaN nanostructure fabrication methods are first discussed, followed by a …

In recent years, GaN nanorods are emerging as a very promising novel route toward devices
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …

Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown
on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by …

Vertically aligned Mg-doped GaN nanorods have been epitaxially grown on n-type Si
substrate to form a heterostructure for fabricating p− n heterojunction photovoltaic cells. The …

The photocatalytic activity of GaN nanowires was investigated for the use of GaN nanowires
as photocatalysts in harsh environments. GaN nanowires with diameters of 20–50 nm and …

This study describes the elimination of threading dislocations (TDs) in GaN nanostructures.
Cross-sectional transmission electron microscopy (XTEM) analysis reveals that the nominal …

GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-
induced by means of Ni seeds. Under identical growth conditions of temperature and V/III …

GaN optoelectronic devices based on nanowires offer potential advantages that merit further
investigation for applications in solid-state lighting and displays. Reported is the operation …

Nanowires make possible to manipulate light in novel methods and thus are promising
materials for advanced optoelectronics. To exploit the potential, the growth behavior has to …