We theoretically explore dwell time for electrons in a semiconductor microstructure, which is
constructed on the surface of the InAs/Al x In 1-x As heterostructure by patterning a …

We investigated the effect of the Dresselhaus spin-orbit coupling on the dwell time of
electrons tunneling through double-barrier structures with or without an external electric …

We theoretically investigate the dwell time for electrons in an antiparallel double δ-magnetic-
barrier nanostructure, which is constructed on the surface of the InAs/Al x In 1-x As …

We calculate dwell time spent by electron in a hybrid magnetic-electric-barrier
semiconductor microstructure, which can be experimentally realized by patterning a …

We calculate dwell time of electron in magnetically and electrically confined semiconductor
nanostructure (MECSN), which can be experimentally fabricated by patterning a …

The dynamics of spin-dependent tunneling through a nonmagnetic semiconductor double-
barrier structure is studied including the k 3 Dresselhaus spin orbit coupling is solved by the …

We discuss possible tunneling phenomena associated with complex wave vectors along
directions where the spin degeneracy is lifted in noncentrosymetric semiconductors. We …

We explore the dynamics of matter wave scattering in finite potential wells using analytical
solutions of the Schrödinger equation within the framework of a quantum shutter model. We …

We present a general method for evaluating the maximum transmitted spin polarization and
optimal spin axis for an arbitrary spin–orbit coupling (SOC) barrier system, in which the spins …

We consider a single electron confined within a quantum wire in a system of two
electrostatically induced quantum dots defined by nearby gates. A time-varying electric field …