Gallium nitride (GaN) is an extremely promising wide band gap semiconductor material for
optoelectronics and high temperature, high power electronics. Actually, GaN is probably the …

Since there is no GaN bulk single crystal available, the whole technological development of
GaN based devices relies on heteroepitaxy. Numerous defects are generated in the …

A low dislocation density GaN single crystal substrate is made by forming a seed mask
having parallel stripes regularly and periodically aligning on an undersubstrate, growing a …

Seeds are implanted in a regular pattern upon an undersubstrate. An Al x In y Ga 1− x− y N
(0≦ x≦ 1, 0≦ y≦ 1, 0< x+ y≦ 1) mixture crystal is grown on the seed implanted …

This review article attempts to present a comprehensive picture of the progress in selective
epitaxial growth (SEG) of cubic silicon carbide (3C-SiC) to make it a cheap and practical …

We have studied the influence of the carrier gas (hydrogen versus nitrogen) on the
morphology and defect characteristics of GaN grown by epitaxial lateral overgrowth (ELO) …

Metalorganic vapor phase epitaxy was used to achieve selective regrowth of undoped, Mg-
and Si-doped GaN on a silicon nitride patterned mask, capping a GaN epitaxial layer …

Selective and lateral overgrowth by Metal Organics Vapour Phase Epitaxy (MOVPE) was
carried out until coalescence to produce smooth and optically flat thick GaN layers. A GaN …

Semiconductor materials including a gallium nitride material region and methods associated
with such structures are provided. The semiconductor structures include a strain-absorbing …

We present a detailed study of photoluminescence transients for neutral donor bound
excitons (DBEs) in GaN, notably the ON donor DBE at 3.4714 eV and the Si Ga DBE at …