Modeling of NBTI using BAT framework: DC-AC stress-recovery kinetics, material, and process dependence
S Mahapatra, N Parihar - IEEE Transactions on Device and …, 2020 - ieeexplore.ieee.org
Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
Modeling of DC-AC NBTI stress-recovery time kinetics in P-channel planar bulk and FDSOI MOSFETs and FinFETs
The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …
Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect …
X Li, Y Shao, Y Wang, F Liu, F Kuang, Y Zhuang, C Li - Micromachines, 2024 - mdpi.com
In this paper, we investigate the effects of negative bias instability (NBTI) and self-heating
effect (SHE) on threshold voltage in NSFETs. To explore accurately the interaction between …
effect (SHE) on threshold voltage in NSFETs. To explore accurately the interaction between …
NSFET performance optimization through SiGe channel design-A simulation study
SL Cheng, C Li, XY Dong, SS Lv, HL You - Microelectronics Reliability, 2023 - Elsevier
In this article, NSFET performances including DC electrical characteristics, analog/RF
metrics and NBTI degradation are studied using 3D fully-calibrated TCAD simulation …
metrics and NBTI degradation are studied using 3D fully-calibrated TCAD simulation …
Analysis of the hole trapping detrapping component of NBTI over extended temperature range
N Choudhury, N Parihar… - 2020 IEEE International …, 2020 - ieeexplore.ieee.org
An Activated Barrier Double Well Thermionic (ABDWT) model is used to calculat e hole
trapping-detrapping (ΔV HT) kinetics, which, together with generation of interface (ΔV IT) …
trapping-detrapping (ΔV HT) kinetics, which, together with generation of interface (ΔV IT) …
Impact of low-temperature and low-pressure mild oxidation after plasma solidification on electrical properties and reliability in ultra-thin SiON MOSFETs
Q Teng, Y Wu, K Xu, D Gao - Microelectronic Engineering, 2024 - Elsevier
The impact of different SiON manufacturing processes on performance and reliability
behaviors has been investigated for the MOSFETs. The performance of devices composed …
behaviors has been investigated for the MOSFETs. The performance of devices composed …
Using long short-term memory (LSTM) network to predict negative-bias temperature instability
F Arefaine, M Duan, R Tiwari, A Kapoor… - … on Simulation of …, 2021 - ieeexplore.ieee.org
In this paper, Long Short-Term Memory (LSTM) is used to predict transistor degradation due
to Negative-Bias Temperature Instability (NBTI). The LSTM is trained by Technology …
to Negative-Bias Temperature Instability (NBTI). The LSTM is trained by Technology …
6-3 Benchmarking Charge Trapping Models with NBTI, TDDS and RTN Experiments
S Bhagdikar, S Mahapatra - 2020 International Conference on …, 2020 - ieeexplore.ieee.org
A systematic review and comparison of existing charge trapping models in literature is
performed. A framework for simulating hole trapping/de-trapping kinetics is established to …
performed. A framework for simulating hole trapping/de-trapping kinetics is established to …
[PDF][PDF] DOCTEUR DE L'UNIVERSITÉ DE BORDEAUX
NPD Pour - 2022 - theses.hal.science
Résumé Les condensateurs diélectriques possèdent une densité de puissance intrinsèque
élevée, mais ils souffrent d'une faible densité énergétique. Aujourd'hui, les systèmes …
élevée, mais ils souffrent d'une faible densité énergétique. Aujourd'hui, les systèmes …