Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which
revolutionary innovations are needed to address fundamental limitations on material and …

Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …

Recently, a novel two-dimensional (2D) MoSi2N4 has been successfully synthesized and
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …

Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …

The quest for organic field-effect transistors (OFETs) with low operating voltage has become
highly compelling in many application areas, such as medical sensors, radio frequency …

We present herewith a novel approach of equally thick AFE/FE (ZrO2/HZO) bilayer stack
heterostructure films for achieving an equivalent oxide thickness (EOT) of 4.1 Å with a …

Ferroelectric memories have attracted great attention for data storage, and ferroelectric
polymers have been widely studied with the development of flexible and wearable devices …

Two-dimensional (2D) ferroelectric materials are promising for use in high-performance
nanoelectronic devices due to the non-volatility, high storage density, low energy cost and …

Ferroelectric (FE) materials, including BiFeO3, P (VDF‐TrFE), and CuInP2S6, are a type of
dielectric material with a unique, spontaneous electric polarization that can be reversed by …

Recently, integrating ferroelectric materials with nanotransistors such as carbon nanotube
field-effect transistors (CNTFETs) has opened new doors for demonstrating a new …