Abstract Tunnel Filed Effect Transistors (TFETs) have appeared as an alternative for
conventional CMOS due to their advantages like very low leakage current and steep sub …

Abstract Tunnel Field Effect Transistors (TFETs) have emerged as serious contenders for the
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …

The device behavior of a stacked ferroelectric heterojunction tunnel field effect transistor (Fe-
HTFET) on a buried oxide substrate is investigated in this paper. Si-doped HfO 2 was taken …

This article reports an architecture of a silicon-on-insulator (SOI) tunnel field effect transistor
(TFET) possessing an npn body, where the two pn junctions serve as the primary tunneling …

A heterojunction tunneling field effect transistor with an L-shaped gate (HJ-LTFET), which is
very applicable to operate at low voltage, is proposed and studied by TCAD tools in this …

Triple heterojunction (THJ) tunneling field-effect transistors (TFETs) have been proposed to
resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is …

van der Waals p–n heterojunctions using both 2D–2D and mixed-dimensional systems have
shown anti-ambipolar behavior. Gate tunability in anti-ambipolar characteristics is obtained …

In this letter, a tunneling field effect transistor based on quasi-broken gap energy band
alignment (QB-TFET) is proposed and investigated by simulation method. To offering high …

The Hamiltonian size reduction method or the mode space method applicable to general
heterogeneous structures is developed in this work. The effectiveness and accuracy of the …

In this manuscript, carrier transport simulation methods are proposed for devices with the
coexistence of quantum transport and diffusive transport by combining the nonequilibrium …