The modern-day computing technologies are continuously undergoing a rapid changing
landscape; thus, the demands of new memory types are growing that will be fast, energy …

Flexible electronic devices have received great attention in the fields of foldable electronic
devices, wearable electronic devices, displays, actuators, synaptic bionics and so on …

Graphene oxide (GO)-based memristors offer the promise of low cost, eco-friendliness, and
mechanical flexibility, making them attractive candidates for outstanding flexible electronic …

Organic nonvolatile memory devices have a vital role for the next generation of electrical
memory units, due to their large scalability and low-cost fabrication techniques. Here, we …

Resistive switching (RS) behavior of bilayer of poly (4-vinylphenol)(PVP): molybdenum
disulfide (MoS 2) nanocomposite (NC) and TiO 2 in resistive random-access memory …

High-performance flexible resistive random access memory (RRAM) devices were
demonstrated by engineering the switching layer with PVK: MoS2 composite and TiO2 …

In this work, a unique composite of a polymer and two-dimensional material (PVP: MoSe2) is
demonstrated as a potential resistive switching layer for flexible resistive random-access …

Flexible resistive random access memory (RRAM) devices with biomaterial gelatin and
ultrathin HfOx hybrid bilayer dielectric exhibiting excellent resistive switching (RS) behavior …

The basic unit of information in conductive bridge random access memory based on the
redox mechanism of metal ions is physically stored in a conductive filament (CF). Therefore …

Reliability of nonvolatile resistive switching devices is the key point for practical applications
of next-generation nonvolatile memories. Nowadays, nanostructured organic/inorganic …