The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
Doping of III-nitride materials
P Pampili, PJ Parbrook - Materials Science in Semiconductor Processing, 2017 - Elsevier
In this review paper we will report the current state of research regarding the doping of III-
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …
Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3
VC Agulto, T Iwamoto, H Kitahara, K Toya… - Scientific Reports, 2021 - nature.com
Gallium nitride (GaN) is one of the most technologically important semiconductors and a
fundamental component in many optoelectronic and power devices. Low-resistivity GaN …
fundamental component in many optoelectronic and power devices. Low-resistivity GaN …
Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to
M Feneberg, S Osterburg, K Lange, C Lidig, B Garke… - Physical Review B, 2014 - APS
The interplay between band gap renormalization and band filling (Burstein-Moss effect) in n-
type wurtzite GaN is investigated. For a wide range of electron concentrations up to 1.6× 10 …
type wurtzite GaN is investigated. For a wide range of electron concentrations up to 1.6× 10 …
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
Tracking of point defects in the full compositional range of AlGaN via photoluminescence spectroscopy
A comprehensive energy map as a function of AlGaN composition over the whole alloy
range is presented for commonly observed point defects in nominally intrinsic, n‐, and p …
range is presented for commonly observed point defects in nominally intrinsic, n‐, and p …
Electronic biosensors based on III-nitride semiconductors
We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based
electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors …
electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors …
[图书][B] Handbook of GaN semiconductor materials and devices
This book addresses material growth, device fabrication, device application, and
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …
Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control
A defect quasi Fermi level (dQFL) control process based on above bandgap illumination
was applied to control H and V N-complexes, which are the main contributors to the …
was applied to control H and V N-complexes, which are the main contributors to the …
Ge doping of GaN beyond the Mott transition
A Ajay, J Schörmann… - Journal of Physics D …, 2016 - iopscience.iop.org
We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-
assisted molecular-beam epitaxy, reaching carrier concentrations of up to 6.7× 10 20 cm− 3 …
assisted molecular-beam epitaxy, reaching carrier concentrations of up to 6.7× 10 20 cm− 3 …