Nanowire electronics: from nanoscale to macroscale

C Jia, Z Lin, Y Huang, X Duan - Chemical reviews, 2019 - ACS Publications
Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …

Semiconductor nanowires: to grow or not to grow?

PC McIntyre, AF i Morral - Materials Today Nano, 2020 - Elsevier
Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …

Single-nanowire solar cells beyond the Shockley–Queisser limit

P Krogstrup, HI Jørgensen, M Heiss, O Demichel… - Nature …, 2013 - nature.com
Light management is of great importance in photovoltaic cells, as it determines the fraction of
incident light entering the device. An optimal p–n junction combined with optimal light …

III–V nanowire photovoltaics: Review of design for high efficiency

RR LaPierre, ACE Chia, SJ Gibson… - physica status solidi …, 2013 - Wiley Online Library
This article reviews recent developments in nanowire‐based photovoltaics (PV) with an
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …

Tandem solar cells using GaAs nanowires on Si: design, fabrication, and observation of voltage addition

M Yao, S Cong, S Arab, N Huang, ML Povinelli… - Nano …, 2015 - ACS Publications
Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the
Shockley–Queisser limit. Due to their unique optical, electrical, and crystallographic …

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

W Kim, L Güniat, A Fontcuberta i Morral… - Applied Physics …, 2021 - pubs.aip.org
Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …

Room temperature GaAsSb single nanowire infrared photodetectors

Z Li, X Yuan, L Fu, K Peng, F Wang, X Fu… - …, 2015 - iopscience.iop.org
Antimonide-based ternary III–V nanowires (NWs) allow for a tunable bandgap over a wide
range, which is highly interesting for optoelectronics applications, and in particular for …

Modulation doping of GaAs/AlGaAs core–shell nanowires with effective defect passivation and high electron mobility

JL Boland, S Conesa-Boj, P Parkinson… - Nano …, 2015 - ACS Publications
Reliable doping is required to realize many devices based on semiconductor nanowires.
Group III–V nanowires show great promise as elements of high-speed optoelectronic …

Photonic–plasmonic coupling of GaAs single nanowires to optical nanoantennas

A Casadei, EF Pecora, J Trevino, C Forestiere… - Nano …, 2014 - ACS Publications
We successfully demonstrate the plasmonic coupling between metal nanoantennas and
individual GaAs nanowires (NWs). In particular, by using dark-field scattering and second …

Diameter evolution of selective area grown Ga-assisted GaAs nanowires

H Küpers, RB Lewis, A Tahraoui, M Matalla, O Krüger… - Nano Research, 2018 - Springer
Tapering of vapour-liquid-solid (VLS) grown nanowires (NWs) is a widespread phenomenon
resulting from dynamics of the liquid droplet during growth anddirect vapour-solid (VS) …