GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing
various applications in lighting, displays, biotechnology, and other fields. However, their …

Physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes
and remedies proposed for droop mitigation are classified and reviewed. Droop …

An unequivocal correlation between the onset of high injection and the onset of the
efficiency droop is demonstrated in GaInN light-emitting diodes over a wide range of …

Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current
density perplexes the development of high-power solid-state lighting. Although the relevant …

We discuss the influence of V-pits and their energy barrier, originating from its facets of
(101¯ 1) planes, on the luminescence efficiency of InGaN LEDs. Experimental analysis …

Indirect phonon-assisted Auger recombination mechanisms in bulk InGaN are investigated
in the framework of perturbation theory, using first-principles phonon spectral density …

Multiphysics processes such as recombination dynamics in the active region, carrier
injection and transport, and internal heating may contribute to thermal and efficiency droop …

This paper presents the analytical model for the analysis of internal quantum efficiency as
well as light output power of GaN-based light-emitting diodes by introducing the polarization …

The authors discuss a relatively comprehensive theoretical and experimental study aimed
on unveiling the dominant efficiency loss mechanism at high injection levels in InGaN light …