[图书][B] Thermoelectrics and its Energy Harvesting, 2-Volume Set

DM Rowe - 2018 - books.google.com
Comprising two volumes, Thermoelectrics and Its Energy Harvesting reviews the vast
improvements in technology and application of thermoelectric energy with a specific …

[图书][B] Modules, systems, and applications in thermoelectrics

DM Rowe - 2012 - books.google.com
Comprising two volumes, Thermoelectrics and Its Energy Harvesting reviews the dramatic
improvements in technology and application of thermoelectric energy with a specific …

Novel fabrication techniques for ultra-thin silicon based flexible electronics

JY Lee, JE Ju, C Lee, SM Won… - International Journal of …, 2024 - iopscience.iop.org
Flexible electronics offer a multitude of advantages, such as flexibility, lightweight property,
portability, and high durability. These unique properties allow for seamless applications to …

Fabrication of nanocrystalline silicon thin films utilized for optoelectronic devices prepared by thermal vacuum evaporation

MS Abo Ghazala, HA Othman, LM Sharaf El-Deen… - ACS …, 2020 - ACS Publications
Metal-induced crystallization of amorphous silicon is a promising technique for developing
high-quality and cheap optoelectronic devices. Many attempts tried to enhance the crystal …

The initial stage of the reaction between amorphous silicon and crystalline aluminum

D He, JY Wang, EJ Mittemeijer - Journal of applied physics, 2005 - pubs.aip.org
The initial stage of crystallization of amorphous silicon in Al∕ Si and Si∕ Al bilayers was
investigated by x-ray diffraction analysis and Auger electron spectroscopy. The bilayers …

Reaction between amorphous Si and crystalline Al in Al/Si and Si/Al bilayers: microstructural and thermodynamic analysis of layer exchange

D He, JY Wang, EJ Mittemeijer - Applied Physics A, 2005 - Springer
Aluminium-induced crystallization of amorphous silicon (a-Si) in Al/Si and Si/Al bilayers was
studied upon annealing at 250° C by X-ray diffraction and Auger electron spectroscopy. The …

EBSD analysis of polysilicon films formed by aluminium induced crystallization of amorphous silicon

Ö Tüzün, JM Auger, I Gordon, A Focsa… - Thin Solid Films, 2008 - Elsevier
Among the methods for enlarging the grain size of polycrystalline silicon (poly-Si) thin films,
aluminium induced crystallization (AIC) of amorphous silicon is considered to be a very …

Chromium oxide as a metal diffusion barrier layer: An x-ray absorption fine structure spectroscopy study

M Ahamad Mohiddon, K Lakshun Naidu… - Journal of Applied …, 2014 - pubs.aip.org
The interaction at the interface between chromium and amorphous Silicon (a-Si) films in the
presence of a sandwich layer of chromium oxide is investigated using X-ray absorption fine …

Nickel-assisted metal-induced crystallization of silicon: Effect of native silicon oxide layer

L Pereira, RMS Martins, N Schell, E Fortunato… - Thin Solid Films, 2006 - Elsevier
This work focuses on the role of the native oxide layer (SiO2) on the nickel (Ni)-assisted
crystallization of amorphous silicon (a-Si). In some samples, the native oxide was removed …

Nanocrystalline Si formation in the a-Si/Al system on polyimide and silicon dioxide substrates

TL Alford, PK Shetty, ND Theodore, N Tile, D Adams… - Thin Solid Films, 2008 - Elsevier
Polysilicon (poly-Si) films fabricated on flexible substrates are of considerable interest
because of their potential application in flexible displays. In this study, an 800 nm layer of …