Wide-bandgap semiconductor ultraviolet photodetectors
Industries such as the automotive, aerospace or military, as well as environmental and
biological research have promoted the development of ultraviolet (UV) photodetectors …
biological research have promoted the development of ultraviolet (UV) photodetectors …
Breakdown mechanisms in AlGaN/GaN HEMTs: an overview
G Meneghesso, M Meneghini… - Japanese Journal of …, 2014 - iopscience.iop.org
This paper reviews the physical mechanisms responsible for breakdown current in
AlGaN/GaN high electron mobility transistors (HEMTs). Through a critical comparison …
AlGaN/GaN high electron mobility transistors (HEMTs). Through a critical comparison …
[图书][B] Gallium nitride and silicon carbide power devices
BJ Baliga - 2016 - books.google.com
During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …
of gallium nitride and silicon carbide device structures, resulting in experimental …
[图书][B] Analysis and simulation of heterostructure devices
V Palankovski, R Quay - 2004 - books.google.com
Communication and information systems are subject to rapid and highly so phisticated
changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar …
changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar …
Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer
T Kabemura, S Ueda, Y Kawada… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
We make a 2-D analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with
a high-k passivation layer, and the results are compared with those having a normal SiN …
a high-k passivation layer, and the results are compared with those having a normal SiN …
Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High- Passivation Layer
H Hanawa, H Onodera, A Nakajima… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
2-D analysis of breakdown characteristics in AlGaN/GaN high electron mobility transistors
(HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer …
(HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer …
Electrical conduction in metals and semiconductors
S Kasap, C Koughia, HE Ruda - Springer handbook of electronic and …, 2017 - Springer
Electrical transport through materials is a large and complex field, and in this chapter we
cover only a few aspects that are relevant to practical applications. We start with a review of …
cover only a few aspects that are relevant to practical applications. We start with a review of …
Impact of water-assisted electrochemical reactions on the OFF-state degradation of AlGaN/GaN HEMTs
F Gao, SC Tan, JA del Alamo… - … on electron devices, 2013 - ieeexplore.ieee.org
The origin of structural and electrical degradation in AlGaN/GaN high-electron mobility
transistors (HEMTs) under OFF-state stress was systematically studied. Hydroxyl groups (OH …
transistors (HEMTs) under OFF-state stress was systematically studied. Hydroxyl groups (OH …
Breakdown behaviour of high-voltage GaN-HEMTs
W Saito, T Suwa, T Uchihara, T Naka… - Microelectronics …, 2015 - Elsevier
The breakdown mechanism of high-voltage GaN-HEMT was analysed using the
experimental I–V characteristics and two-dimensional device simulation results. The holes …
experimental I–V characteristics and two-dimensional device simulation results. The holes …
Lucky drift impact ionization in amorphous semiconductors
The review of avalanche multiplication experiments clearly confirms the existence of the
impact ionization effect in this class of semiconductors. The semilogarithmic plot of the …
impact ionization effect in this class of semiconductors. The semilogarithmic plot of the …