Mole fraction effects on AlxGa1−xN/AlN/GaN MOSHEMT analog/RF performance: analytical model and simulation assessment
In this work, the authors have investigated and proposed an analytical model for different
mole fraction variation for the AlxGa1− xN/AlN/GaN MOSHEMT. The mole fraction …
mole fraction variation for the AlxGa1− xN/AlN/GaN MOSHEMT. The mole fraction …
Gate dielectric material influence on DC behavior of MO (I) SHEMT devices operating up to 150° C
PGD Agopian, GJ Carmo, JA Martino, E Simoen… - Solid-State …, 2021 - Elsevier
In this work, the DC behavior of AlGaN/GaN Metal-Insulator-Semiconductor high electron
mobility transistors (MO (I) SHEMTs) with two different gate dielectrics (Al 2 O 3 and Si 3 N 4) …
mobility transistors (MO (I) SHEMTs) with two different gate dielectrics (Al 2 O 3 and Si 3 N 4) …
Study of effective graded oxide capacitance and length variation on analog, rf and power performances of dual gate underlap MOS-HEMT
S Ghosh, A Mondal, M Kar, A Kundu - Silicon, 2021 - Springer
Comparative analysis of a Symmetric Heterojunction Underlap Double Gate (U-DG)
GaN/AlGaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) on …
GaN/AlGaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) on …
Influence of GaN layer to AlGaN layer width Ratio on Analog Performance of an Underlapped DG AlGaN/GaN based MOS-HEMT
U Chatterjee, A Pal, A Kundu… - 2020 IEEE Calcutta …, 2020 - ieeexplore.ieee.org
This paper aims at exploring the changes in analog performance of a symmetric
Underlapped Double-Gate hetero-junction based AlGaN/GaN MOS-HEMT device, with …
Underlapped Double-Gate hetero-junction based AlGaN/GaN MOS-HEMT device, with …
AlN/β-Ga₂O₃ MOSHEMT as Biosensor
A Tomar, A Misra, A Rawtani, A Bag… - 2024 IEEE Applied …, 2024 - ieeexplore.ieee.org
Gallium Oxide (Ga 2 O 3), as an ultra-wide bandgap semiconductor, has shown great
promise for power electronics. Due to its chemical and thermal stability and biocompatibility …
promise for power electronics. Due to its chemical and thermal stability and biocompatibility …
Impact of AlGaN barrier layer on DC and AC characteristics of AlxGa1−xN/GaN MOSHEMT
Wide Band (W-Band) Metal Oxide Semiconductor with High Electron Mobility Transistor was
purposed on the Al x Ga 1− x N/GaN heterostructure with 25nm, 30nm, 35nm and 40nm Al x …
purposed on the Al x Ga 1− x N/GaN heterostructure with 25nm, 30nm, 35nm and 40nm Al x …
Effect of Doped AlGaN Width Variation on Analog Performance of Dual Gate Underlap MOS-HEMT
A Mondal, S Ghosh, A Roy, M Kar… - 2020 IEEE Calcutta …, 2020 - ieeexplore.ieee.org
A Symmetric Heterojunction Underlap Double Gate (U-DG) GaN/AlGaN Metal Oxide
Semiconductor High Electron Mobility Transistor (MOS-HEMT) having negatively doped …
Semiconductor High Electron Mobility Transistor (MOS-HEMT) having negatively doped …
Drain Charactersitic Analysis of High Electron Mobility Transistor (Moshemt)
R Mariappan - Available at SSRN 3379286, 2019 - papers.ssrn.com
A High-electron-mobility transistor, otherwise called a field-effect transistor consolidating an
intersection between two materials with various band holes as the channel rather than a …
intersection between two materials with various band holes as the channel rather than a …
[PDF][PDF] AlN/β-Ga2O3 MOSHEMT as Biosensor
PC Pilani - researchgate.net
Gallium Oxide (Ga2O3), as an ultra-wide bandgap semiconductor, has shown great promise
for power electronics. Due to its chemical and thermal stability and biocompatibility, it can be …
for power electronics. Due to its chemical and thermal stability and biocompatibility, it can be …
Performance enhancement in Al0.3Ga0.7N/GaN HEMT based inverter using MOSHEMT
SP Nayak, P Dutta… - 2017 1st International …, 2017 - ieeexplore.ieee.org
In this work, a 2D structure of AlGaN/GaN HEMT is designed and an inverter is implemented
to investigate the switching characteristics of the device. The issues of high on-resistance of …
to investigate the switching characteristics of the device. The issues of high on-resistance of …