Intrinsic parameter fluctuation and process variation effect of vertically stacked silicon nanosheet complementary field-effect transistors
We study the variability of vertically stacked gate-all-around silicon nanosheet (GAA Si NS)
complementary field-effect transistors (CFETs). The process variation effect (PVE), the work …
complementary field-effect transistors (CFETs). The process variation effect (PVE), the work …
Statistical Device Simulation and Machine Learning of Process Variation Effects of Vertically Stacked Gate-All-Around Si Nanosheet CFETs
In this study, we report the process variation effect (PVE) including the work function
fluctuation (WKF) on the DC/AC characteristic fluctuation of stacked gate-all-around silicon …
fluctuation (WKF) on the DC/AC characteristic fluctuation of stacked gate-all-around silicon …
Characteristic Variability of GAA Si NS CFETs Induced by Process Variation Effect and Intrinsic Parameter Fluctuation
We simultaneously estimate impacts of process variation effect (PVE) consisting of three
major variations and intrinsic parameter fluctuation (IPF) including two crucial random …
major variations and intrinsic parameter fluctuation (IPF) including two crucial random …