III-V compound semiconductor-based light emitting devices (LEDs) operating in ultraviolet to
visible wavelength ranges are greatly important for their applications, including displays …

In this paper, we report SiO 2 capped Zinc Oxide nanorod array (SiO 2 capped-ZnO NAs) for
enhancing UV random lasing emissions at room temperature. A simple method chemical …

An effective method to enhance the light extraction for GaInN light-emitting diodes (LEDs) is
reported. The method employs TiO 2 micro-pillars with tapered sidewalls, which are …

We report on the improved light extraction efficiency of blue light-emitting diodes (LEDs) by
SiO 2-coated ZnO nanorods (NRs) grown on indium–tin oxide (ITO). The optical output …

A hybrid SiO 2 micro/nanospheres antireflection coating, deposited by a rapid convection
deposition, acting as a passivation layer of GaN-based light-emitting diodes (LEDs) is …

A novel, blue light-emitting diode (LED) packaging structure with improved light and thermal
characteristics is presented. The package includes a TiO 2-doped silicone layer and silicone …

Novel vertical light-emitting diodes (VLEDs) decorated with N-doped graphene quantum
dots (N-GQDs) have been fabricated, based on the metal organic chemical vapor deposition …

The characteristics of GaN-based light-emitting diodes (LEDs) with a hybrid structure
incorporating a microhole array, 45 sidewalls, and an appropriate SiO 2 nanoparticle …

In this study, we report on the synthesis and applications of zinc-tin-oxide (ZTO) as a light
extraction layer for GaN-based light-emitting diodes (LED). The ZTO layers formed on top of …

A hybrid patterned ZnO micro-cylinders and nanorods array (MCNR) was fabricated to
improve the light extraction efficiency for high brightness GaN-based light-emitting diodes …