Complex oxides, such as ABO 3 perovskites, are an important class of functional materials
that exhibit a wide range of physical, chemical, and electrochemical properties, including …

The confluence of state‐of‐the‐art electronic‐structure computations and modern synthetic
materials growth techniques is proving indispensable in the search for and discovery of new …

The formation of two-dimensional electron gases (2DEGs) at complex oxide interfaces is
directly influenced by the oxide electronic properties. We investigated how local electron …

We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator,
LaTiO 3, and a band insulator, KTaO 3. For LaTiO 3/KTaO 3 interfaces, we observe metallic …

Dynamical mean field theory (DMFT), combined with finite-temperature exact
diagonalization, is one of the methods used to describe electronic properties of strongly …

During the growth of oxide thin films by pulsed laser deposition, a strong oxygen substrate-to-
film transfer has been experimentally observed for SrTiO 3 and LaAlO 3 thin films epitaxially …

The Mott transistor is a paradigm for a new class of electronic devices—often referred to by
the term Mottronics—which are based on charge correlations between the electrons. Since …

In this paper we investigate the effect of disorder on highly correlated electron systems,
which exhibit metal-insulator transition (MIT) and structural-phase transition (SPT). We show …

Intriguingly, conducting perovskite interfaces between ordinary band insulators are widely
explored, whereas similar interfaces with Mott insulators are still not quite understood. Here …

We investigate the effect of epitaxial strain on the Mott metal-insulator transition (MIT) in
perovskite systems with d 1 and d 2 electron configurations of the transition metal (TM) …