We use a recently developed ab initio approach to calculate the lattice thermal conductivities of compound semiconductors. An exact numerical solution of the phonon Boltzmann …
Since their advent around the start of the millennium, hot carrier solar cells came into the focus of a broader research community as one of the so-called third generation photovoltaic …
Raman scattering measurements between 20 and 450 K are reported in Ga 1− x Al x As single crystals for the range 0≤ x≤ 1. Peak-frequency and linewidth variations versus …
W Nakwaski - Physica B: Condensed Matter, 1995 - Elsevier
A comparative survey of known experimental and theoretical values of heavy-hole and electron effective mass in GaAs, InAs, and A1As is presented in this work. Recommended …
J Groenen, R Carles, G Landa, C Guerret-Piécourt… - Physical Review B, 1998 - APS
We present an experimental and theoretical investigation of long-wavelength optical- phonon behavior in Ga 1− x In x As alloys. We propose a model which accounts …
G Kaczmarczyk, A Kaschner, S Reich… - Applied Physics …, 2000 - pubs.aip.org
We present results of first-and second-order Raman-scattering experiments on hexagonal and cubic InN covering the acoustic and optical phonon and overtone region. Using a …
We have applied the multiband effective mass/valence force field method to the calculation of optical transitions and absorption spectra in InAs/GaAs self-organized dots of different …
A Tabata, AP Lima, LK Teles, LMR Scolfaro… - Applied physics …, 1999 - pubs.aip.org
We report on x-ray diffraction and micro-Raman scattering studies on zinc blende InN epitaxial films. The samples were grown by molecular beam epitaxy on GaAs (001) …
In general, vibrational physics has been well described by quantum perturbation theory (QPT) to provide footprint characteristics for common crystals. However, despite weak …