Metamorphic transistors: Building blocks for hetero-integrated circuits
KE Lee, EA Fitzgerald - MRS Bulletin, 2016 - cambridge.org
Metamorphic epitaxy offers the possibility of growing devices on wafers composed of
different materials that might be larger than the native bulk substrates for a potential cost …
different materials that might be larger than the native bulk substrates for a potential cost …
Low-noise microwave performance of 30 nm GaInAs MOS-HEMTs: Comparison to low-noise HEMTs
GaInAs-based Metal Oxide Semiconductor High Electron Mobility Transistors (MOS-HEMTs)
can in principle combine the wide bandwidth of HEMTs to the low gate leakage current of …
can in principle combine the wide bandwidth of HEMTs to the low gate leakage current of …
DC and RF Characterization of InAs based Double Delta Doped MOSHEMT Device
RS Kumar, R Poornachandran… - 2018 IEEE Electron …, 2018 - ieeexplore.ieee.org
In this work, Double delta doped with double gate (DG) Metal Oxide Semiconductor High
Electron Mobility Transistor (MOSHEMT) is distinguished by the novel design features such …
Electron Mobility Transistor (MOSHEMT) is distinguished by the novel design features such …
Enhanced InGaAs/InAs/InGaAs Composite Channel MOSHEMT Device Performance by Using Double Gate Recessed Structure with HfO2 as Dielectric Materials
R Saravana Kumar, N Mohankumar… - Micro-Electronics and …, 2021 - Springer
This work reports that the composite channel InGaAs, InAs and InGaAs thin, with dual delta-
doped double recessed gate (DG) MOSHEMT, is 40 nm gate length, the barrier 3 nm and 15 …
doped double recessed gate (DG) MOSHEMT, is 40 nm gate length, the barrier 3 nm and 15 …