Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for
environmental sensing of hazardous gases, security, defense, and medical applications …

In this paper, the results of the electrical, noise, and optical characterization of pin and pBin
diodes with AlSb and 4 ML AlSb/8 ML GaSb superlattice barriers in High-Operating …

In the paper, the results of the study on how etching type influences the quality of mesa
structures in discrete antimonide-based photodetectors are presented. Devices based on …

This work reports on the impact of defects on the parameters of type II InAs/GaSb
superlattices (SLs) and photoconductors (PCs) from the very long wavelength infrared …

Heteroepitaxy growth of antimonide-based superlattices offers new opportunities for band
structure engineering in infrared optoelectronics. Due to the wafer size limitations and cost of …

We report on the comprehensive investigations of InAs/GaSb type-II superlattice (SL) with
asymmetric and symmetric interfaces (IFs) formed using a migration-enhanced epitaxy …

We report on a 10 μm InAs/GaSb type-II superlattice (T2SL) grown by molecular beam
epitaxy on a GaAs substrate using an interfacial misfit (IMF) array and investigate the optical …

In this paper, the study of defects in InAs/GaSb type-II superlattices using high-resolution an
x-ray diffraction method as well as scanning (SEM) and transmission (TEM) electron …

This study presents a demonstration of the surface morphology behavior of gallium
antimonide (GaSb) layers deposited on gallium arsenide (GaAs)(100) substrates using three …

Type-II strained superlattices (T2SLs) have indeed garnered significant interest as an
alternative to existing infrared (IR) detection technologies. T2SLs are a relatively new …