Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been …
The critical size limit of voltage-switchable electric dipoles has extensive implications for energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …
Ultrathin ferroelectric materials could potentially enable low-power logic and nonvolatile memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …
The past decade has witnessed dramatic progress related to various aspects of emergent topological polar textures in oxide nanostructures displaying vortices, skyrmions, merons …
Abstract The Materials Genome Initiative (MGI) advanced a new paradigm for materials discovery and design, namely that the pace of new materials deployment could be …
P Man, L Huang, J Zhao, TH Ly - Chemical Reviews, 2023 - ACS Publications
Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and …
Y Liu, Y Wang, J Ma, S Li, H Pan, CW Nan… - Progress in Materials …, 2022 - Elsevier
Abstract Bismuth ferrite (BiFeO 3, BFO) as one of the few single-phase room-temperature multiferroics, has aroused ever-increasing enthusiasm in research communities during the …
A defining feature of emergent phenomena in complex oxides is the competition and cooperation between ground states. In manganites, the balance between metallic and …
At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's …