Deep donor levels (DX centers) in III‐V semiconductors
PM Mooney - Journal of Applied Physics, 1990 - pubs.aip.org
DX centers, deep levels associated with donors in III‐V semiconductors, have been
extensively studied, not only because of their peculiar and interesting properties, but also …
extensively studied, not only because of their peculiar and interesting properties, but also …
The conduction band structure and deep levels in Ga1-xAlxAs alloys from a high-pressure experiment
AK Saxena - Journal of Physics C: Solid State Physics, 1980 - iopscience.iop.org
High-pressure Hall effect measurements on liquid phase epitaxial crystals of Ga 1-x Al x As
with compositions in the range 0.23< or= x< or= 0.79 have provided information about the …
with compositions in the range 0.23< or= x< or= 0.79 have provided information about the …
A new model of deep donor centres in AlxGa1-xAs
JCM Henning, JPM Ansems - Semiconductor Science and …, 1987 - iopscience.iop.org
Spectroscopic investigations of Si-doped Al x Ga 1-x As reveal that the deep donor ('DX
centre') exhibits an electron-phonon interaction of moderate strength. The Huang-Rhys …
centre') exhibits an electron-phonon interaction of moderate strength. The Huang-Rhys …
The relationship of the DX centre in AlxGa1-xAs and other III-V alloys with the conduction band structure
P Bhattacharya - Semiconductor science and technology, 1988 - iopscience.iop.org
The electrical properties of the Al x Ga 1-x As alloys for x> or= 0.24 are dominated by deep
donors which appear in undoped and doped crystals. The corresponding defects, which are …
donors which appear in undoped and doped crystals. The corresponding defects, which are …
Deep levels and a possible dx-like center in molecular beam epitaxial inxal1−xas
WP Hong, S Dhar, PK Bhattacharya, A Chin - Journal of electronic …, 1987 - Springer
The work reported here was performed in order to establish whether or not complex defects
like the DX center can be present in InAlAs. Dominant deep electron and hole traps in lattice …
like the DX center can be present in InAlAs. Dominant deep electron and hole traps in lattice …
Photoconductivity storage in Ga1− xAlxAs alloys at low temperatures
AK Saxena - Solid-State Electronics, 1982 - Elsevier
Intentionally undoped n-type and high purity Ga 1− x Al x As alloys with compositions in the
range 0.19≤ x≤ 0.78 are found to show a long life time photoconductivity effect at low …
range 0.19≤ x≤ 0.78 are found to show a long life time photoconductivity effect at low …
Theory of the DX Centers in III-V Semiconductors and (001) Superlattices
E Yamagughi - Journal of the Physical Society of Japan, 1987 - journals.jps.jp
Deep donor levels which are referred to as the DX centers are calculated using the
scattering-theoretic method in Al x Ga 1-x As, GaAs 1-y P y and Al x Ga 1-x Sb …
scattering-theoretic method in Al x Ga 1-x As, GaAs 1-y P y and Al x Ga 1-x Sb …
The Origin of the DX Center in AlxGa1-xAs
E Yamaguchi - Japanese journal of applied physics, 1986 - iopscience.iop.org
A new microscopic origin of the DX center in Al x Ga 1-x As is proposed on the basis of the
scattering-theoretic method calculation. Calculated results show that the central cell …
scattering-theoretic method calculation. Calculated results show that the central cell …
Lattice relaxation of pressure‐induced deep centers in GaAs: Si
Deep centers induced by hydrostatic pressure in GaAs: Si have been studied by deep level
transient spectroscopy and constant temperature capacitance transient techniques. The …
transient spectroscopy and constant temperature capacitance transient techniques. The …
In situ Hall effect measurement on diamond anvil cell under high pressure
T Hu, X Cui, Y Gao, Y Han, C Liu, B Liu, H Liu… - Review of Scientific …, 2010 - pubs.aip.org
A method for in situ Hall effect measurement under high pressure was developed on a
diamond anvil cell. The electrode was accurately integrated on one diamond anvil with …
diamond anvil cell. The electrode was accurately integrated on one diamond anvil with …