Impact & Analysis of Inverted-T shaped Fin on the Performance parameters of 14-nm heterojunction FinFET
S Verma, SL Tripathi - Silicon, 2022 - Springer
A new high-performance inverted-T shaped 14 nm heterojunction FinFETs has been
proposed that originate from the rectangular fin structures. The rationale for proposing this …
proposed that originate from the rectangular fin structures. The rationale for proposing this …
Nanoscale tri gate MOSFET for ultra low power applications using high-k dielectrics
The Triple-Gate (TG) MOSFET has emerged as one of the promising devices to extend
CMOS technology beyond the scaling limit of conventional CMOS technology. Triple gate …
CMOS technology beyond the scaling limit of conventional CMOS technology. Triple gate …
Design and optimization of novel shaped FinFET
A novel high-performance and miniaturized fin-shaped field effect transistor has been
proposed which has been named as rectzoidal (rectz) because of its origin from the existing …
proposed which has been named as rectzoidal (rectz) because of its origin from the existing …
III–V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10 nm technology and beyond
K Datta, QDM Khosru - Solid-State Electronics, 2016 - Elsevier
In this work, quantum ballistic simulation study of a III–V tri-gate MOSFET has been
presented. At the same time, effects of device parameter variation on ballistic, subthreshold …
presented. At the same time, effects of device parameter variation on ballistic, subthreshold …
Design of age based FINFET for CPU switch applications
G Mogosetso - 2022 - repository.biust.ac.bw
The field of microelectronics experienced a huge shift from the traditional planar MOSFET to
3D multi-gated structures, most noticeable being the FinFET. FinFET is regarded the most …
3D multi-gated structures, most noticeable being the FinFET. FinFET is regarded the most …
Influence of Fin Dimensions on Performance of Nanoscale Rectzoidal Bulk Fin Shaped Field Effect Transistor
FinFET, being a propitious 3D device at lower technology nodes has captured utmost
importance in the processors of computing devices of various semiconductor manufacturing …
importance in the processors of computing devices of various semiconductor manufacturing …
Electrical characteristics of 14nm SiC-3C channel SOI FinFET with dual-k spacer
FinFETs have been the most promising replacement of MOSFETs for nanoscale era. Below
20nm, performance is highly degraded due to severe short channel effects (SCEs). In this …
20nm, performance is highly degraded due to severe short channel effects (SCEs). In this …
[PDF][PDF] SCEs Investigation of Tri-Gate SOI FinFET in Different Channel Lengthes
B Fakhr, SE Hosseini - 2015 - sid.ir
Abstract compact scaling length for Tri-gate SOI FinFET is presented based on a 3-D
simulation. SCEs of FinFETs can be controlled by changing the gate length. Changing …
simulation. SCEs of FinFETs can be controlled by changing the gate length. Changing …