This article reviews the performance of vertical metal-oxide-semiconductor (MOS) radiation
detectors on n-type 4H-silicon carbide (SiC) epitaxial layers, comparing SiO2, Y2O3, and …

We study the impact of different alkali post‐deposition treatments by thermal admittance
spectroscopy and temperature‐dependent current‐voltage (IVT) characteristics of high …

Wide band gap thin-film kesterite solar cell based on non-toxic and earth-abundant
materials might be a suitable candidate as a top cell for tandem configuration in combination …

A multifaceted characterization approach is proposed, aiming to establish a link between
nanoscale electrical properties and macroscale device characteristics. Current–voltage (I–V) …

The following work deals with interpreting defect spectroscopy results for CIGS solar cells.
The motivation and brief background for defect physics investigation in photovoltaic …

We demonstrate for the first time heteroepitaxial metal-oxide–semiconductor (MOS)
structures as radiation detectors for harsh environment applications. The Ni/-Ga2O3/4H-SiC …

We report evidence for the identification of the capacitance transients detected at room
temperature for thin-film photovoltaic cells with CIGS absorbers as an additional non-ohmic …

The origin of the N1 signal in capacitance spectroscopy within CIGS solar cells has been a
subject of enduring debate. While its characteristics may vary across different specimens …

This chapter aims to review analytical techniques for the detection of electrically active
defects in semiconductor materials. In all cases, the operation principles, the strengths, and …

Despite 20 years of research on Cu (In, Ga) Se 2 (CIGSe) solar cells there is still no
conclusive model to explain the electronic properties of the back contact between the CIGSe …