Tunnel field effect transistor (TFET): A review

FA Omar, TM Abdolkader - International Journal of Materials …, 2024 - ijmti.journals.ekb.eg
Tunnel field effect transistors (TFETs) offer a solution to the concerns that accompanied
conventional Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) as a result of …

Design and investigation of f-shaped tunnel fet with enhanced analog/rf parameters

P Singh, DS Yadav - Silicon, 2021 - Springer
In this manuscript, a novel physically doped single gate F-shaped tunnel FET is simulated
and optimized. The designed configuration is well optimized and analyzed for different …

[HTML][HTML] Design and investigation of a dual source and U-shaped gate TFET with n buffer and SiGe pocket

H Xie, H Liu - AIP advances, 2020 - pubs.aip.org
In this paper, we propose and simulate a novel structure of a double source and U-shaped
gate tunnel field effect transistor (DS-UTFET) with an n buffer layer and n+ SiGe pocket. In …

A new stacked gate oxide L-shaped tunnel field effect transistor

K Eyvazi, HR Yaghoubi, MA Karami - Journal of Computational Electronics, 2024 - Springer
In this paper, a new stacked gate oxide L-shaped Tunnel Field Effect Transistor (LTFET) is
proposed. The stacked gate oxide structure incorporates high-k and SiO2 dielectrics. The …

Suppressing ambipolar current in UTFET by auxiliary gate

K Eyvazi, MA Karami - Iranian Journal of Science and Technology …, 2021 - Springer
In this paper, a new U-shaped channel tunneling-based field-effect transistor (UTFET) with
auxiliary gate above drain is proposed. The ambipolar current in the proposed is …

Heterodielectric oxide‐engineered single‐lateral pocket‐based gated source TFET

Ashita, SA Loan, HI Alkhammash… - International Journal of …, 2021 - Wiley Online Library
In this work, we propose and investigate a new pocket‐based Si0. 55Ge0. 45/Si gate normal
tunnel FET design employing a gate over source with a single lateral pocket (GSLP) with …