In this manuscript, a novel physically doped single gate F-shaped tunnel FET is simulated and optimized. The designed configuration is well optimized and analyzed for different …
In this paper, we propose and simulate a novel structure of a double source and U-shaped gate tunnel field effect transistor (DS-UTFET) with an n buffer layer and n+ SiGe pocket. In …
K Eyvazi, HR Yaghoubi, MA Karami - Journal of Computational Electronics, 2024 - Springer
In this paper, a new stacked gate oxide L-shaped Tunnel Field Effect Transistor (LTFET) is proposed. The stacked gate oxide structure incorporates high-k and SiO2 dielectrics. The …
K Eyvazi, MA Karami - Iranian Journal of Science and Technology …, 2021 - Springer
In this paper, a new U-shaped channel tunneling-based field-effect transistor (UTFET) with auxiliary gate above drain is proposed. The ambipolar current in the proposed is …
In this work, we propose and investigate a new pocket‐based Si0. 55Ge0. 45/Si gate normal tunnel FET design employing a gate over source with a single lateral pocket (GSLP) with …