GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

After summing up the main physical properties of ZnO and its subsequent applications the
aim of this article is to review the growth of ZnO epitaxial films by PLD, MBE, MOCVD and …

A semiconductor device having excellent crystallinity and excellent electric characteristics
includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n …

Whenever a compound crystal is cut normal to a randomly chosen direction, there is an
overwhelming probability that the resulting surface corresponds to a polar termination and is …

A series of ZnO films with various thicknesses were prepared on (0001) sapphire substrate
by pulsed laser deposition (PLD). Scanning electron microscopy (SEM) and x-ray diffraction …

Polar surfaces of compound materials have been the subject of intense activity in the past.
Electrostatic arguments, based on a model of rigid charges, predict that they should have an …

We report the experimental results of the valence band offset at a ZnO/GaN (0001)
heterointerface. The ZnO/GaN (0001) heterointerface is prepared by growing a ZnO layer on …

In this work, simulations of the electronic band structure of a p-GaN/n-ZnO heterointerface
are presented. In contrast to homojunctions, an additional energy barrier due to the type-II …

A two-dimensional electron gas was observed in Zn polar Zn Mg O∕ Zn O (ZnMgO on ZnO)
heterostructures grown by radical source molecular beam epitaxy. The electron mobility of …

We have investigated ZnO epilayers grown under various Zn/O ratios by plasma-assisted
molecular-beam epitaxy. The growth conditions are elucidated by a relationship between …