Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Abstract Silicon-on-insulator (SOI) wafers offer significant advantages for both Integrated
circuits (ICs) and microelectromechanical systems (MEMS) devices with their buried oxide …

The synthesis of graphene nanoribbons on complementary metal–oxide–semiconductor-
compatible substrates is a significant challenge hindering their integration into commercial …

We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in
order to grow “mushroom-free” Si and SiGe: B Raised Sources and Drains (RSDs) on each …

This paper emphasizes that the furnace pressure, crucible rotation, and pulling rate have
important effects on interstitial oxygen (Oi) concentrations and micro-defects during growth …

The first part of this paper deals with the standard etching techniques (Secco, Schimmel,
Wright etch…) used for defects delineation in Si, SiGe, Ge and in new engineered substrates …

Simultaneous and locally resolved determination of the mechanical stress variation and the
free hole concentration using Raman spectroscopy is demonstrated in laser crystallized …

This chapter starts with the basic features of interstitial oxygen which are crucial for further
considerations. Nucleation and growth of oxygen precipitates are described from the …

We present a method for the production of polycrystalline Si (poly-Si) photonic micro-
structures based on laser writing. The method consists of local laser-induced crystallization …