Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

Since the first studies in the late 1970s most of the researches on Si1− xGex nanostructures
have been motivated by their potential applications in micro, opto and nanoelectronic …

Controlled thermal oxidations of thin copper films at relatively lower temperatures (up to 500
C) leading towards the formation of a single phase of copper oxide are investigated where …

The emerging two-dimensional (2D) semiconductors substantially extend materials bases
for versatile applications such as semiconductor photocatalysis demanding semiconductive …

Cobalt germanide (Co x Ge y) is a candidate system for low resistance contact modules in
future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a …

A criterion for the growth of Stranski–Krastanov islands mediated by surfactants is obtained.
It involves that surfactants decrease the island nucleation barrier. Thereby, at a low …

Although ultraviolet photoelectron emission spectroscopy and microscopy have served as
powerful tools for electronic structure analysis in both reciprocal and real space, the …

Ge atoms have been deposited on domain-patterned clean Si (111)-(7× 7) and oxidized Si
(111)-(7× 7) surfaces. Clustering of Ge from the deposited Ge adatoms on these two kinds of …

Submonolayer deposition of 3 d transition metals such as Cr, Mn, Fe, Co, and Ni on Pd (110)
at room temperature causes the formation of monoatomic chains of Pd as identified with …

The optical properties of multiple nanoscale twin boundaries in indirect-gap AlGaAs
epilayers were studied. Twin boundaries of Σ3-type, extended on {111} B, were self …