Superluminal-like magnon propagation in antiferromagnetic NiO at nanoscale distances

K Lee, DK Lee, D Yang, R Mishra, DJ Kim, S Liu… - Nature …, 2021 - nature.com
Magnon-mediated angular-momentum flow in antiferromagnets may become a design
element for energy-efficient, low-dissipation and high-speed spintronic devices,. Owing to …

Recent progress on measurement of spin–charge interconversion in topological insulators using ferromagnetic resonance

R Dey, A Roy, LF Register, SK Banerjee - APL Materials, 2021 - pubs.aip.org
Spin–orbit coupling (SOC) in materials plays a crucial role in interconversion between spin
and charge currents. In reduced dimensions, SOC effects are enhanced and have been the …

All-Electrical Spin-to-Charge Conversion in Sputtered BixSe1-x

WY Choi, IC Arango, VT Pham, DC Vaz, H Yang… - Nano Letters, 2022 - ACS Publications
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the
small signal magnitude used for magnetization readout, making it important to find materials …

Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion

E Longo, L Locatelli, P Tsipas, A Lintzeris… - … Applied Materials & …, 2023 - ACS Publications
Properly tuning the Fermi level position in topological insulators is of vital importance to
tailor their spin-polarized electronic transport and to improve the efficiency of any functional …

Electronic Structure and Transport Properties of Bi2Te3 and Bi2Se3 Single Crystals

VV Marchenkov, AV Lukoyanov, ST Baidak… - Micromachines, 2023 - mdpi.com
The electrical resistivity and the Hall effect of topological insulator Bi2Te3 and Bi2Se3 single
crystals were studied in the temperature range from 4.2 to 300 K and in magnetic fields up to …

Spin-Sensitive Epitaxial In2Se3 Tunnel Barrier in In2Se3/Bi2Se3 Topological van der Waals Heterostructure

CH Li, J Moon, OMJ van 't Erve… - … Applied Materials & …, 2022 - ACS Publications
Current-generated spin arising from spin-momentum locking in topological insulator (TI)
surface states has been shown to switch the magnetization of an adjacent ferromagnet (FM) …

Spintronic Quantum Phase Transition in a Graphene/Pb0.24Sn0.76Te Heterostructure with Giant Rashba Spin‐Orbit Coupling

JE DeMell, I Naumov, GM Stephen… - Advanced Functional …, 2024 - Wiley Online Library
Mechanical stacking of two dissimilar materials often has surprising consequences for
heterostructure behavior. In particular, a 2D electron gas (2DEG) is formed in the …

Probing intrinsic magnetization dynamics of the interface at low temperature

AR Will-Cole, V Lauter, A Grutter, C Dubs… - Physical Review …, 2024 - APS
Topological insulator–magnetic insulator (TI–MI) heterostructures hold significant promise in
the field of spintronics, offering the potential for manipulating magnetization through …

[图书][B] Spintronics: Theory, Modelling, Devices

T Blachowicz, A Ehrmann - 2024 - books.google.com
Spintronics, being a part of electronics, is under intense development for about forty years
and mainly concerns transport of electronics spin in low-dimensional structures. This field …

Reply to:“On the understanding of current-induced spin polarization of three-dimensional topological insulators”

CH Li, OMJ van 't Erve, S Rajput, L Li… - Nature …, 2019 - nature.com
Spin potentiometric measurements have been used to electrically detect spin polarization
arising from spinmomentum locking in topological insulator (TI) surface states 1–10, albeit …