Abstract Journal of Physics D: Applied Physics published the first Plasma Roadmap in 2012
consisting of the individual perspectives of 16 leading experts in the various sub-fields of low …

Current (and future) microelectronics fabrication requirements place unprecedented
demands on the fidelity of plasma etching. As device features shrink to atomic dimensions …

Atomic layer etching (ALE) is a promising technique that can solve the challenges
associated with continuous or pulsed plasma processes—trade-offs between selectivity …

As semiconductor device structures continue to approach the nanometer size range, new
challenges in the fabrication of such devices have arisen. For example, the need for high …

The atomic layer etching (ALE) of silicon nitride (SiN) via a hydrogen plasma followed by
exposure to fluorine radicals was investigated by using in situ spectroscopic ellipsometry …

Atomic layer etching has emerged as a viable approach to address the challenges
associated with continuous or quasicontinuous plasma processes. To this end, the authors …

In this study, two Cr atomic layer etching (ALE) methods have been applied for the precise
control of Cr etching. The first one involves O radical adsorption followed by Cl+ ion …

Atomic layer etching (ALE) has advantages such as precise thickness control, high etch
selectivity, and no‐increase in surface roughness which can be applied to sub 10 nm …

Atomic layer etching is an advanced plasma etching technique that enables the atomic-
precision control. In this study, the effects of surface conditions on the stability of the etched …

Atomic layer etching (ALE) of Ga-polar GaN (0001) using a standard inductively coupled
plasma-reactive ion etching system is achieved in this work. The sequential process is using …