A review on chemical and physical preparation of platinum nanoparticles and some
applications with these nanoparticles is presented. Application perspectives such fields as …

We report on the bipolar resistive switching behavior of a SiO 2/Si multilayer (ML) structure
measured without current compliance for non-volatile memory applications. The SiO 2/Si ML …

CdS, ZnS and core–shell CdS/ZnS quantum dots (QDs) with different ratio concentration of
core to shell (1: 1, 1: 2, 1: 3, 1: 4, 1: 5) were synthesized and their structural, optical and …

In this paper we report size dependent single electron tunneling behavior at room
temperature in a metal–oxide–semiconductor structure with uniformly sized Pt nanoparticles …

In this work, we report the digital and analog resistive-switching (RS) characteristics in a
memristor based on silicon nanocrystals (Si-NCs) integrated into a complementary metal …

In this paper, the effect of different concentrations of Ag nanoparticles embedded in
graphene oxide (GO) for resistive random-access memory (RRAM) has been investigated …

In this work, we demonstrate multi-level operation of a non-volatile memory metal oxide
semiconductor capacitor by controlled layer-by-layer charging of platinum nanoparticle …

It is fundamentally important to understand the nanoscale electronic properties of a single
quantum dot (QD) contrary to an ensemble of QDs. Kelvin probe force microscopy (KPFM) …

A non-volatile floating gate memory device containing well-ordered Au nanoparticles (NPs)
is fabricated as a metal–oxide–semiconductor capacitor structure. With superior control on …

The design of nanostructured materials with specific physical properties is generally
pursued by tuning nanoparticle size, concentration, or surface passivation. An important step …