We present experimental flux-temperature phase diagrams for surface reconstruction
transitions on the 6.1 Å compound semiconductors. The phase transitions occur within or …

Abstract 100 nm thick GaAsBi layers were grown at a range of temperatures using both As 2
and As 4. Measurements of Bi incorporation based on room temperature …

The growth of III–V bismuthides is complicated by the low incorporation efficiency of Bi in
GaAs, leading either to the formation of metallic Bi droplets or low layer composition …

A comprehensive investigation of the interfacial misfit (IMF) array formation has been carried
out. The studies were based on the static phase diagram for GaAs (001) surface and As 2 …

We have investigated the effects of N on the electronic properties of Si-doped Ga As 1− x N x
alloy films and Al Ga As∕ Ga As N modulation-doped heterostructures. For bulk-like alloy …

We describe in some detail the desired characteristics of an exceedingly clean MBE system,
its optimal growth conditions, and the main parameters of structures design needed in order …

Методом дифракции быстрых электронов на отражение in situ изучено изменение
структуры и элементного состава поверхности epi-ready InP (001) подложки в потоке …

Molecular beam epitaxy (MBE) is an elegant material growth technique that is most simply
described as a very refined form of vacuum evaporation or physical vapor deposition, with …

We investigate molecular beam epitaxy (MBE) growth conditions of micrometers-thick In0.
52Al0. 48As designed for waveguide of InGaAs/InAlAs/InP quantum cascade lasers. The …

The semiconductor industry has prioritized automating repetitive tasks by closed-loop,
autonomous experimentation which enables accelerated optimization of complex multi-step …