The conventional method for creating the highly doped regions of a transistor consists of ion
implantation followed by rapid thermal annealing (RTA). This technique, however, cannot …

Fission times of uraniumlike nuclei with excitation energies up to about 250 MeV have been
inferred from blocking effects in a single crystal. They are found longer by at least 1 order of …

We report insight into the deactivation mechanisms of group V donors in heavily doped
silicon. Based on our ab initio calculations, we suggest a three step model for the donor …

Laser annealing is being studied as an alternative dopant activation technique to form the
ultrashallow, low resistivity junctions required in future generations of integrated circuits …

Les systèmes avancés d'assistance à la conduite automobile ont comme objectif d'apporter
de l'intelligence au véhicule en l'équipant d'un ensemble de capteurs extéroceptifs et …

As semiconductor device dimensions continue to decrease, the main challenge in the area
of junction formation involves decreasing the junction depth while simultaneously increasing …

It has recently been established that Si self-interstitials are generated during annealing of
high-concentration Sb layers in Si. In the present work, we make use of samples grown with …

We have investigated boron diffusion during rapid thermal annealing in Si implanted with
boron using an energy of 1 keV and a dose of 1× 10 16 cm− 2⁠. Two types of samples have …

Over the past 30 years, the semiconductor industry has grown at a tremendous rate, creating
faster and cheaper integrated circuits with more functionality. Continued scaling, however …

References Page 1 176 References Akhiezer AI, and Berestetskii VB, Quantum electrodynamics
(1965), Wiley, New York Alatalo M., Kauppinen H., Saarinen K., Puska MJ, Makinen J …