Recent progress in optoelectronic memristors for neuromorphic and in-memory computation

ME Pereira, R Martins, E Fortunato… - Neuromorphic …, 2023 - iopscience.iop.org
Neuromorphic computing has been gaining momentum for the past decades and has been
appointed as the replacer of the outworn technology in conventional computing systems …

Zinc–Tin oxide film as an earth-abundant material and its versatile applications to electronic and energy materials

J Seo, H Yoo - Membranes, 2022 - mdpi.com
Zinc–Tin Oxide (ZTO) films potentially offer desirable properties for next-generation devices
and are considered promising candidates due to the following merits:(I) zinc and tin are …

[HTML][HTML] Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks

ME Pereira, J Deuermeier, P Freitas, P Barquinha… - APL Materials, 2022 - pubs.aip.org
Neuromorphic computation based on resistive switching devices represents a relevant
hardware alternative for artificial deep neural networks. For the highest accuracies on …

Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices

C Silva, J Deuermeier, W Zhang… - Advanced Electronic …, 2023 - Wiley Online Library
As the Internet of things (IOT) industry continues to grow with an ever‐increasing number of
connected devices, the need for processing large amounts of data in a fast and energy …

Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes

P Wendel, D Dietz, J Deuermeier, A Klein - Materials, 2021 - mdpi.com
The current-voltage characteristics of ZnO/RuO 2 Schottky diodes prepared by magnetron
sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a …

A Neural Network Approach towards Generalized Resistive Switching Modelling

G Carvalho, M Pereira, A Kiazadeh, VG Tavares - Micromachines, 2021 - mdpi.com
Resistive switching behaviour has been demonstrated to be a common characteristic to
many materials. In this regard, research teams to date have produced a plethora of different …

Amorphous Oxide Semiconductor Memristors: Brain-inspired Computation

ME Pereira, E Carlos, E Fortunato, R Martins… - 2023 - books.rsc.org
New computing paradigms are urgently required to replace the outworn von Neumann
architecture that, currently, carries numerous constraints such as latency, high-power …

In-sensor Computing Based on Two-terminal Optoelectronic Memristors

Y Lin, Z Wang, X Zhao, H Xu, Y Liu - 2023 - books.rsc.org
In-sensor computing, which is capable of combining sensing, processing, and memory in a
single unit, has been proposed to implement a brain-inspired artificial visual system. Among …

[PDF][PDF] Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes. Materials 2021, 14, 2678

P Wendel, D Dietz, J Deuermeier, A Klein - 2021 - research.unl.pt
The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron
sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a …

Reversible Barrier Switching of ZnO/RuO₂ Schottky Diodes

P Wendel, D Dietz, J Deuermeier, A Klein - Materials - tuprints.ulb.tu-darmstadt.de
The current-voltage characteristics of ZnO/RuO₂ Schottky diodes prepared by magnetron
sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a …