Material science and device physics in SiC technology for high-voltage power devices
T Kimoto - Japanese Journal of Applied Physics, 2015 - iopscience.iop.org
Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation
Abstract 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) and
MOS capacitors were fabricated by the following procedures: H 2 etching, SiO 2 deposition …
MOS capacitors were fabricated by the following procedures: H 2 etching, SiO 2 deposition …
Analysis of admittance measurements of Al/Gr-PVA/p-Si (MPS) structure
D Ata, SA Yeriskin, A Tataroğlu, M Balbasi - Journal of Physics and …, 2022 - Elsevier
A metal-polymer-semiconductor (MPS) structure based on 5 wt% graphene (Gr) doped
polyvinyl alcohol (PVA) thin film was fabricated by using the electrospinning method …
polyvinyl alcohol (PVA) thin film was fabricated by using the electrospinning method …
Electrical characterization of SiC MOS capacitors: A critical review
This paper reviews the feasibility of the state-of-the-art electrical techniques adopted from Si
technology for characterization of SiC MOS devices. The inability of these conventional …
technology for characterization of SiC MOS devices. The inability of these conventional …
Improved channel mobility in 4H-SiC MOSFETs by boron passivation
D Okamoto, M Sometani, S Harada… - IEEE Electron …, 2014 - ieeexplore.ieee.org
We propose another process for fabricating 4H-SiC metal-oxide-semiconductor field-effect
transistors (MOSFETs) with high channel mobility. The B atoms were introduced into a SiO …
transistors (MOSFETs) with high channel mobility. The B atoms were introduced into a SiO …
Interface Properties of 4H-SiC ( ) and ( ) MOS Structures Annealed in NO
S Nakazawa, T Okuda, J Suda… - … on Electron Devices, 2014 - ieeexplore.ieee.org
Interface properties of 4H-SiC (112̅0) and (11̅00) walls, the absence of junction FET
resistance, and the higher metal-oxide-semiconductor (MOS) structures annealed in nitric …
resistance, and the higher metal-oxide-semiconductor (MOS) structures annealed in nitric …
[HTML][HTML] High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers
Alkali (Rb and Cs) and alkaline earth (Ca, Sr, and Ba) elements have been investigated as
interface passivation materials for metal-oxide-semiconductor field-effect transistors …
interface passivation materials for metal-oxide-semiconductor field-effect transistors …
Improvement of both n-and p-channel mobilities in 4H-SiC MOSFETs by high-temperature N₂ annealing
K Tachiki, T Kimoto - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
Effects of high-temperature (1400° C–1600° C) N 2 annealing on the interface states of 4H-
SiC/SiO 2 and the channel mobility of 4H-SiC metal–oxide–semiconductor field-effect …
SiC/SiO 2 and the channel mobility of 4H-SiC metal–oxide–semiconductor field-effect …
[HTML][HTML] CV and JV investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3
In this letter, MOS capacitors with bilayer dielectrics consisted of large bandgap Al 2 O 3 and
high-k HfO 2 in different stacking order on n-type doped (100) β-Ga 2 O 3 are investigated …
high-k HfO 2 in different stacking order on n-type doped (100) β-Ga 2 O 3 are investigated …
Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
T Kamimura, D Krishnamurthy… - Japanese Journal of …, 2016 - iopscience.iop.org
Al 2 O 3 films were deposited on β-Ga 2 O 3 (010) and β-Ga 2 O 3$(\bar {2} 01) $ substrates
by atomic layer deposition at 250 C, and their interface state densities (D it) at shallow …
by atomic layer deposition at 250 C, and their interface state densities (D it) at shallow …