Silicon-based microelectronics technology is extremely mature, yet this profoundly important
material is now also poised to become a foundation for quantum information processing …

We have developed a “linear combination of bulk bands” method that permits atomistic,
pseudopotential electronic structure calculations for∼ 10 6 atom nanostructures. Application …

The band structure of type-I (In, Al) As/AlAs quantum dots with band gap energy exceeding
1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential …

The use of a small number of bands in conventional k· p treatment of nanostructures leads to
“farsightedness”(hyperopia), whereby the correct, detailed atomistic symmetry is not seen by …

Over the course of the last thirty years, the investigation of objects at the nano scale has
rocketed. Nanoscale scientific research has not only powerfully affected the amount and …

Carrier transport in GaAs-based vertical-cavity surface-emitting lasers (VCSELs) is
investigated by means of an in-house multiphysics code, with particular emphasis on the …

Using the method of induced band representations of space groups, we have performed a
complete group-theory analysis of electron state symmetries in superlattices grown along …

We have developed a theory of low-temperature energy relaxation of localized excitons in
semiconductor quantum wells and quantum wires. The steady-state population of the …

Theoretical calculations of intersubband light absorption spectra in p-type (001) G a A s/A lx
Ga 1− x As single heterojunctions under uniaxial compression have been performed. The …

Coupling between different Γ, X, and L band-structure valleys is responsible for (a) level
anticrossing in superlattices as a function of period, pressure, and electric field and for …