Development of InGaN-based red LED grown on (0001) polar surface
We report on the optical properties of the InGaN-based red LED grown on a c-plane
sapphire substrate. Blue emission due to phase separation was successfully reduced in the …
sapphire substrate. Blue emission due to phase separation was successfully reduced in the …
Room temperature electroluminescence from Laser MBE grown gallium nitride LEDs
Abstract Gallium Nitride (GaN) based inverted pin junction and InGaN/GaN quantum well
LEDs have been demonstrated using Laser Molecular Beam Epitaxy technique. The …
LEDs have been demonstrated using Laser Molecular Beam Epitaxy technique. The …
Rugged electrical power switching in semiconductors: A systems approach
Current status of wide bandgap (WBG) semiconductor material technology is evaluated for
developing high-performance and reliable power electronics switching converters. The …
developing high-performance and reliable power electronics switching converters. The …
Composition and interface analysis of InGaN/GaN multiquantum-wells on GaN substrates using atom probe tomography
In 0.20 Ga 0.80 N/GaN multiquantum wells (MQWs) grown on [0001]-oriented GaN
substrates with and without an InGaN buffer layer were characterized using three …
substrates with and without an InGaN buffer layer were characterized using three …
In-situ and post deposition analysis of laser MBE deposited GaN films at varying nitrogen gas flow
Highly crystalline c-axis oriented GaN thin films have been realized on c-plane sapphire
substrate using Laser MBE technique. The deposition was carried out under the influence of …
substrate using Laser MBE technique. The deposition was carried out under the influence of …
Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers
GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour
phase epitaxy (MOVPE) techniques are compared through electronic transport …
phase epitaxy (MOVPE) techniques are compared through electronic transport …
Optimization of the growth of GaN epitaxial layers in an indigenously developed MOVPE system
Growth of GaN epitaxial layers is optimized in an indigenously developed nitride metal
organic vapour phase epitaxy (MOVPE) system. The motivation of present work is to develop …
organic vapour phase epitaxy (MOVPE) system. The motivation of present work is to develop …
The effect of growth temperature on structural quality of AlInGaN/AlN/GaN heterostructures grown by MOCVD
R Loganathan, M Balaji, K Prabakaran… - Journal of Materials …, 2015 - Springer
In this paper, the influence of the growth temperature on the structural quality of AlInGaN
epilayer on the GaN/sapphire substrate grown by metal–organic chemical vapor deposition …
epilayer on the GaN/sapphire substrate grown by metal–organic chemical vapor deposition …
Luminescence studies of laser MBE grown GaN on ZnO nanostructures
GaN films have been successfully fabricated using Laser Molecular Beam Epitaxy (LMBE)
technique on bare c-plane sapphire substrate and ZnO nanostructures (NS) decorated Si …
technique on bare c-plane sapphire substrate and ZnO nanostructures (NS) decorated Si …
ZnO nanostructure-assisted growth of (0002)-oriented GaN thin films by laser molecular beam epitaxy
Vertically aligned zinc oxide (ZnO) nanostructures (NS) have been fabricated without any
catalyst on Si (100) and sapphire (0002) substrates using high-pressure-assisted pulsed …
catalyst on Si (100) and sapphire (0002) substrates using high-pressure-assisted pulsed …