For an atom with such a uniquely simple electronic makeup, hydrogen shows remarkable
mutability as a ligand. As a one-electron substituent with no significant potential for π-type …

Many crystalline solids cannot be prepared as single crystals of sufficient size and/or quality
for structure determination to be carried out using single crystal X-ray diffraction techniques …

The AlGaInN quaternary alloy system is uniquely suited for numerous device applications
because the bandgap can be varied from 1.9 to 6.2 eV by changing the alloy composition …

We present a systematic study of the complex chemistry and transport phenomena
underlying metalorganic vapor phase epitaxy (MOVPE) of AlGaN; in particular, the …

Using in situ laser light scattering, we have observed gas-phase nanoparticles formed
during AlN, GaN and InN OMVPE. The response of the scattering intensity to a wide range of …

Abstract The compounds [Al (NMe 2) 3] 2 (1),[Ga (NMe 2) 3] 2 (2),[(Me 2 N) 2 Al {μ-N (H) 1-
Ad}] 2 (3) and [{Me (μ-NPh 2) Al} 2 NPh (μ-C 6 H 4)]· 0.5 PhMe (4) have been structurally …

In view of the increasing applications of metal alkoxides as precursors for ceramics, the
physicochemical aspects of successive steps in the SSG process are being intensively …

Gallium sulfide (GaS) thin films have been grown at 380-420 C by atmospheric pressure
metal-organic chemical vapor deposition (MOCVD) using the single-source precursors [('Bu) …

Two different systems have been examined as potential sources of aluminum nitride, an
important electronic and structural ceramic material. Cyclic organoaluminum amides …

The reactivity of KNHAr reagents (Ar= C6H5, C6H3Me2-2, 6, C6H3iPr2-2, 6) with lanthanide
and yttrium trichlorides has been investigated. With the larger metals Nd and Sm and the …