A Broadband and Transient-Accurate AlGaN/GaN HEMT SPICE Model for X-Band RF Applications
Dispersive effects such as trapping play a vital role in determining the performance of
AlGaN/gallium nitride (GaN) high-electron mobility transistors (HEMTs) for RF and power …
AlGaN/gallium nitride (GaN) high-electron mobility transistors (HEMTs) for RF and power …
Study of 1500 V AlGaN/GaN High-Electron-Mobility Transistors Grown on Engineered Substrates
AC Liu, PT Chen, CH Chuang, YC Chen, YL Chen… - Electronics, 2024 - mdpi.com
In this study, we demonstrate breakdown voltage at 1500 V of GaN on a QST power device.
The high breakdown voltage and low current collapse performance can be attributed to the …
The high breakdown voltage and low current collapse performance can be attributed to the …
Fractional-Order Equivalent Model for Dynamic On-Resistance of GaN HEMTs
H Jin, X Chen, H Ma, B Zhu - 2024 IEEE 7th International …, 2024 - ieeexplore.ieee.org
GaN high electron mobility transistors (HEMTs) have been widely used due to their high
withstand voltage characteristic and low parasitic parameters. However, these devices …
withstand voltage characteristic and low parasitic parameters. However, these devices …