High-k 2D Sb2O3 Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process
High dielectric constant (high-k) ultrathin films are required as insulating gate materials. The
well-known high-k dielectrics, including HfO2, ZrO2, and SrTiO3, feature three-dimensional …
well-known high-k dielectrics, including HfO2, ZrO2, and SrTiO3, feature three-dimensional …
Structural, Spectroscopic, Electronic and Optical Properties of Novel Platinum Doped (PMMA/ZrO2) and (PMMA/Al2O3) Nanocomposites for Electronics Devices
A Hazim, HM Abduljalil, A Hashim - Transactions on Electrical and …, 2020 - Springer
This work reports a theoretical study to investigate the electronic structure and optimized
geometry for pure PMMA and PMMA doped with ZrO 2, Al 2 O 3 and Pt nanoparticles for …
geometry for pure PMMA and PMMA doped with ZrO 2, Al 2 O 3 and Pt nanoparticles for …
Modeling, Simulation and Analysis of Surface Potential and Threshold Voltage: Application to High-K Material HfO2 Based FinFET
In this study, an analytical model for surface potential and threshold voltage for undoped (or
lightly) doped tri-gate Fin Field Effect Transistor (TG-FinFET) is proposed and validated …
lightly) doped tri-gate Fin Field Effect Transistor (TG-FinFET) is proposed and validated …
[HTML][HTML] A surface potential model for tri-gate metal oxide semiconductor field effect transistor: analysis below 10 nm channel length
In this study, an analytical model of Tri-gate metal-oxide-semiconductor field effect transistor
(TGMOSFET) for short channel lengths below 10 nm is suggested and Technology computer …
(TGMOSFET) for short channel lengths below 10 nm is suggested and Technology computer …
An analytical model for the surface potential and threshold voltage of a double-gate heterojunction tunnel FinFET
A double-gate (DG) heterojunction tunnel FinFET structure with a source overlap region was
analyzed to optimize its performance and validate technology computer-aided design …
analyzed to optimize its performance and validate technology computer-aided design …
An accurate model for threshold voltage analysis of dual material double gate metal oxide semiconductor field effect transistor
In this article, an accurate representation of threshold voltage for double metal double gate
(DMDG) device structure has been initiated. It is the lowest gate-source electromotive force …
(DMDG) device structure has been initiated. It is the lowest gate-source electromotive force …
Charge-Based Trans-Capacitance Model for SiO2/HfO2 Based Nano Scale Trigate FinFET Including Quantum Mechanical Effect
A charge based trans-capacitance model is proposed for undoped or lightly doped Trigate
FinFET. The drain current continuity principle and the Ward-Dutton linear charge partition …
FinFET. The drain current continuity principle and the Ward-Dutton linear charge partition …
An accurate model of threshold voltage and effect of high-K material for fully depleted graded channel DMDG MOSFET
In this study, an accurate model for threshold voltage of graded channel dual material
double gate (GCDMDG) structure metal-oxide-semiconductor (MOS) has been established …
double gate (GCDMDG) structure metal-oxide-semiconductor (MOS) has been established …
A compact drain current model for graded channel DMDG structure with high-k material
This article depicts the drain current for a graded channel double metal double gate
(GCDMDG) device in a unique way. This work offers a thorough examination of the drain …
(GCDMDG) device in a unique way. This work offers a thorough examination of the drain …
Modeling, simulation and performance analysis of drain current for below 10 nm channel length based Tri-Gate FinFET
Lambert W function-based a drain current model of lightly doped short channel tri-gate fin
fashioned field effect transistor (TG-FinFET) is studied. Technology computer aided design …
fashioned field effect transistor (TG-FinFET) is studied. Technology computer aided design …