The mechanism for growth initiation on the nongrowth surface during area-selective atomic
layer deposition (ALD) processes is not well understood. In this study, we examine the ALD …

The authors have investigated the surface reaction mechanisms during the atomic layer
deposition (ALD) of ZrO 2 from tetrakis (ethylmethylamino) zirconium (TEMAZ) with H 2 O, C …

Room-temperature atomic layer deposition (ALD) of ZrO 2 is developed with tetrakis
(ethylmethylamino) zirconium (TEMAZ) and a plasma-excited humidified argon. A growth …

Room-temperature plasma-enhanced atomic layer deposition (PEALD) of ZnO was studied
by depositing the films using diethylzinc and O 2 plasma from inductively-coupled plasma …

The final structure of HfO 2 films grown by atomic layer deposition (ALD) after reaction with
OH− ions has been analyzed by DFT (density functional theory). The interaction of the …

In this article, a combined H2O thermal atomic layer deposition of Al2O3 with in situ N2
plasma treatment process at 90° C for encapsulation applications is reported. The effect of …

In this article, a combined H2O thermal atomic layer deposition of Al2O3 with in situ N2
plasma treatment process at 90 C for encapsulation applications is reported. The effect of …

DEPARTMENT OF PHYSICS UNIVERSITY OF JYVÄSKYLÄ RESEARCH REPORT No. 4/2017
LOW-TEMPERATURE THERMAL AND PLASMA-ENHANCED ATOMIC LA Page 1 …

The research work that I describe in my thesis deals with three different heterogenisation
approaches for synthesising a heterogeneous transition metal catalyst used for direct CH …

Atomic layer deposition (ALD) has become an indispensable technology for the production
of ultra-large-scale integration, since it allows for metal oxide stacking with an atomic-level …