Wide bandgap devices in AC electric drives: Opportunities and challenges
Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …
lightweight than silicon-based converters. WBG devices are an enabling technology for …
Vertical β-Ga₂O₃ Power Transistors: A Review
MH Wong, M Higashiwaki - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …
electronics with capabilities beyond existing technologies due to its large bandgap …
1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below A/cm2
X Lu, X Zhou, H Jiang, KW Ng, Z Chen… - IEEE Electron …, 2020 - ieeexplore.ieee.org
High performance NiO/β-Ga 2 O 3 heterojunction pn diodes were realized by applying a
sputtered p-type NiO film onto a lightly doped n-type β-Ga 2 O 3 epitaxial layer. Taking …
sputtered p-type NiO film onto a lightly doped n-type β-Ga 2 O 3 epitaxial layer. Taking …
P-type β-gallium oxide: A new perspective for power and optoelectronic devices
E Chikoidze, A Fellous, A Perez-Tomas… - Materials Today …, 2017 - Elsevier
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and
power devices, supporting a future energy-saving society. Here we present evidence of p …
power devices, supporting a future energy-saving society. Here we present evidence of p …
Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga 2 O 3, and diamond
Free-standing single crystalline semiconductor membranes have gained intensive attention
over the last few years due to their versatile usage in many applications. This material …
over the last few years due to their versatile usage in many applications. This material …
GaN power integration for high frequency and high efficiency power applications: A review
High frequency and high efficiency operation is one of the premier interests in the signal and
energy conversion applications. The wide bandgap GaN based devices possess superior …
energy conversion applications. The wide bandgap GaN based devices possess superior …
Role of wide bandgap materials in power electronics for smart grids applications
J Ballestín-Fuertes, J Muñoz-Cruzado-Alba… - Electronics, 2021 - mdpi.com
At present, the energy transition is leading to the replacement of large thermal power plants
by distributed renewable generation and the introduction of different assets. Consequently, a …
by distributed renewable generation and the introduction of different assets. Consequently, a …
β-Ga2O3-Based Power Devices: A Concise Review
Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …
generation wide bandgap semiconductor, owing to its natural physical and chemical …
Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs
As a promising ultra-wide bandgap semiconductor, the β-phase of Ga 2 O 3 has attracted
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …