Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?
K Ishikawa, K Karahashi, T Ishijima… - Japanese Journal of …, 2018 - iopscience.iop.org
In this review, we discuss the progress of emerging dry processes for nanoscale fabrication
of high-aspect-ratio features, including emerging design technology for manufacturability …
of high-aspect-ratio features, including emerging design technology for manufacturability …
Comparative analysis of the quantum FinFET and trigate FinFET based on modeling and simulation
A comparative analysis of the trigate fin-shaped field-effect transistor (FinFET) and quantum
FinFET (QFinFET) is carried out by using density gradient quantization models in the …
FinFET (QFinFET) is carried out by using density gradient quantization models in the …
Effect of Mole fraction and Fin Material on Performance Parameter of 14 nm Heterojunction Si1-xGex FinFET and Application as an Inverter
S Verma, SL Tripathi - Silicon, 2022 - Springer
This work presents a new SOI 14 nm heterojunction FinFET with Si 1-x Ge x fin for low-
power digital logic circuits. The channel region of the proposed device consists of Si 1-x Ge …
power digital logic circuits. The channel region of the proposed device consists of Si 1-x Ge …
FinFET to GAA MBCFET: A Review and Insights
This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
Metal gate work function engineering for nano-scaled trigate FinFET
M Lalruatfela, S Panchanan, R Maity… - Microsystem Technologies, 2024 - Springer
Diminution of leakage current is essential for the semiconductor device operating in the
nanometer regime. This paper aims to analyse the consequence of metal work function on …
nanometer regime. This paper aims to analyse the consequence of metal work function on …
Role of Fin Shape on Drain Current of SiO2/HfO2 Based Trigate FinFET Including Quantum Mechanical Effect
A compact Lambert W function-based model is proposed to analyze the drain current of
three different fin-shaped Trigate (TG) FinFETs, namely rectangular (RE_TG), trapezoidal …
three different fin-shaped Trigate (TG) FinFETs, namely rectangular (RE_TG), trapezoidal …
Analysis of total ionizing dose response of optimized fin geometry workfunction modulated SOI-FinFET
The total ionizing dose (TID) response of SOI-FinFET with linear gate workfunction
modulation is presented and evaluated. The gate metal workfunction is linearly modulated …
modulation is presented and evaluated. The gate metal workfunction is linearly modulated …
Fin shape influence on analog and RF performance of junctionless accumulation-mode bulk FinFETs
The non-planar 3D structure of multi-gate FinFETs makes them able to be scaled down to 20
nm and beyond and also have greater performance. But any variation of the fin cross …
nm and beyond and also have greater performance. But any variation of the fin cross …
An analytical model for the surface potential and threshold voltage of a double-gate heterojunction tunnel FinFET
A double-gate (DG) heterojunction tunnel FinFET structure with a source overlap region was
analyzed to optimize its performance and validate technology computer-aided design …
analyzed to optimize its performance and validate technology computer-aided design …
Digital/analog performance optimization of vertical nanowire FETs using machine learning
Vertical nanowire field-effect transistors (NWFETs) have been optimized to maximize digital
and analog performances using fully-calibrated TCAD and machine learning (ML) …
and analog performances using fully-calibrated TCAD and machine learning (ML) …