Technology, capabilities, and performance of low power terahertz sources

G Chattopadhyay - IEEE Transactions on Terahertz Science …, 2011 - ieeexplore.ieee.org
New and emerging terahertz technology applications make this a very exciting time for the
scientists, engineers, and technologists in the field. New sensors and detectors have been …

Terahertz sources and receivers: From the past to the future

S Makhlouf, O Cojocari, M Hofmann… - IEEE Journal of …, 2023 - ieeexplore.ieee.org
The rapid progress in semiconductor technology has vastly boosted the development of
terahertz sources and receivers in terms of compactness, reliability, operation frequency …

Electro-thermal model for multi-anode Schottky diode multipliers

AY Tang, E Schlecht, R Lin… - IEEE Transactions …, 2012 - ieeexplore.ieee.org
We present a self-consistent electro-thermal model for multi-anode Schottky diode multiplier
circuits. The thermal model is developed for an n-anode multiplier via a thermal resistance …

1200 GHz High Spectral Resolution Receiver Front-End of Submillimeter Wave Instrument for JUpiter ICy Moon Explorer: Part I-RF Performance Optimization for …

J Treuttel, L Gatilova, S Caroopen… - IEEE Transactions …, 2023 - ieeexplore.ieee.org
The submillimeter wave instrument is a spectrometer/radiometer instrument on board of
JUpiter ICy Moons Explorer mission operating in two submillimeter heterodyne bands …

[HTML][HTML] Solid-State Terahertz Circuits and Communication Systems for 6G: A Review

Z Niu, B Zhang, Y Zhang, Y Feng, Z Chen… - Chinese Journal of …, 2024 - cje.ejournal.org.cn
Zhongqian Niu Member, IEEE, was born in Luoyang, Henan, China, in 1991. He received
the BE and Ph. D. degrees in electronic science and technology from the University of …

Physical electro-thermal model for the design of Schottky diode-based circuits

CG Perez-Moreno, J Grajal - IEEE Transactions on Terahertz …, 2014 - ieeexplore.ieee.org
Thermal management has become an important issue in the design of Schottky diode-based
circuits for high power applications. This work presents a physics-based numerical electro …

Modelling phase change in a 3D thermal transient analysis

E Haque, P Hampson - The International Journal of …, 2014 - themultiphysicsjournal.com
A 3D thermal transient analysis of a gap profiling technique which utilises phase change
material (plasticine) is conducted in ANSYS. Phase change is modelled by assigning …

Thermal analysis of high-power millimeter-wave Schottky diode frequency multipliers

CG Pérez-Moreno, J Grajal, C Viegas… - … on Millimeter Waves …, 2016 - ieeexplore.ieee.org
This work presents the thermal analysis of a Schottky diode frequency doubler capable of
providing over 30 mW at 160 GHz at room temperature. This analysis includes thermal …

Thermal characterization of quasi-vertical GaAs Schottky diodes integrated on silicon

S Nadri, CM Moore, ND Sauber, L Xie… - … on Electron Devices, 2018 - ieeexplore.ieee.org
This paper presents the first thermal characterization of terahertz quasi-vertical GaAs
Schottky diodes integrated on silicon. The devices are characterized using a …

Electro-Thermal Model for Schottky Barrier Diode Based on Self-Heating Effect

J Cui, Y Zhang, H Wei, Q Wu, S Mao… - 2021 IEEE 4th …, 2021 - ieeexplore.ieee.org
Terahertz frequency multiplier is very important for terahertz transceiver front-end to achieve
terahertz high-speed wireless communication. In this paper, a study was conducted on the …