Design and modification of interfaces, always a critical issue for semiconductor devices, has
become a primary tool to harness the full potential of halide perovskite (HaP)-based …

Here, we report a detailed surface analysis of dry-and ambient air-annealed CsPbI3 films
and their subsequent modified interfaces in perovskite solar cells. We revealed that …

The design of epitaxial semiconductor–superconductor and semiconductor–metal quantum
devices requires a detailed understanding of the interfacial electronic band structure …

Band bending at semiconductor surfaces and interfaces is the key to applications ranging
from classical transistors to topological quantum computing. A semiconductor particularly …

GaP is a preferred candidate for the transition between Si and heterogeneous III-V epilayers
as it is nearly lattice-matched to Si. Here, we scrutinize the atomic structure and electronic …

Sputter‐deposited GaOx (ie, oxygen‐deficient gallium oxide) films are evaluated as a
potential replacement for the standard CdS buffer layers in Cu (In, Ga) Se2 (CIGSe) based …

The band alignment of semiconductor-metal interfaces plays a vital role in modern
electronics, but remains difficult to predict theoretically and measure experimentally. For …

In recent years, block copolymer lithography has emerged as a viable alternative technology
for advanced lithography. In chemical-epitaxy-directed self-assembly, the interfacial energy …

Memristive devices are extensively investigated as non-volatile memory elements due to
their variable resistance that is adjustable by electrical stimuli. They are promising devices …

Photoelectron spectroscopy (PES), also referred to as photoemission spectroscopy, is a
direct experimental method for assessing the chemical and electronic properties of …