Emissive displays based on light‐emitting diodes (LEDs), with high pixel density, luminance,
efficiency, and large color gamut, are of great interest for applications such as watches …

InGaN quantum dot is a promising optoelectronic material, which combines the advantages
of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still …

Stranski–Krastanov (SK) growth mode is widely adopted for the self-assembled growth of
semiconductor quantum dots (QDs), wherein a relatively large critical thickness is essential …

Strong localization effect in self-assembled InGaN quantum dots (QDs) grown by
metalorganic chemical vapor deposition has been evidenced by temperature-dependent …

GaN-based high brightness blue Light Emitting Diode (LED) marks the milestone of Solid
State Lighting (SSL) development which expands a brand-new horizon of illumination. SSL …

InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at
well/barrier upper interface under different temperatures. Hydrogen treatment temperature …

We have successfully implemented green and red light-emitting diodes (LEDs) based on
InGaN/GaN quantum dots (QDs) grown by controlling the process of the growth interruption …

InGaN quantum dot (QD) light-emitting diodes (LEDs) were grown by metalorganic vapor
phase epitaxy using an interruption method. As the injection current density increased from …

The effect of different growth interruption time on the surface morphology and optical
properties of InGaN quantum dots (QDs) grown on 2-inch silicon substrates is investigated …

InGaN quantum dots (QDs) have attracted many research interests in recent years for their
potentials to realize long wavelength visible emission from green to red, which can pave a …