The aim of this study is to gain a deeper understanding of the micromorphology
characteristics of thin titanium nitride (TiN) films sputtered on glass substrates by using ion …

The size of the band gap and the energy position of the band edges make several oxynitride
semiconductors promising candidates for efficient hydrogen and oxygen production under …

Thin zirconium nitride films were prepared on Si (100) substrates at room temperature by ion
beam assisted deposition with a 2 keV nitrogen ion beam. Arrival rate ratios ARR (N/Zr) …

In this study, we investigate the use of an amide-based Ti-containing precursor, namely
tetrakis (diethylamido) titanium (TDEAT), for TiNxOy film deposition at low temperature …

Thin carbon nitride (CNx) films were synthesized on silicon substrates by reactive RF
magnetron sputtering of a graphite target in mixed N2/Ar discharges and the N2 gas fraction …

Thin silicon nitride films were prepared at 350° C by inductively coupled plasma chemical
vapor deposition on Si (100) substrates under different NH3/SiH4 or N2/SiH4 gas mixture …

This study focuses on the etching characteristics of a TiN hard mask in terms of etch rate and
faceting when using a dielectric etch process. The etching experiments have been …

Titanium oxynitride (TiN x O y) thin films with tunable electrical and optical properties were
produced by sputtering using air as a reactive gas at a high base pressure of 1.3× 10− 2 Pa …

Titanium nitride films deposited by conventional magnetron sputtering are prone to
contamination, especially residual gas species, and the composition and properties can be …

Abstract Mixed-phase TiN x-TiO y nanoparticles with an average particlesize of 27–120 nm
were prepared by the levitation-jet generator through condensation of Ti metal vapor in inert …