Hybrid spintronic materials: Growth, structure and properties
Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or
in addition to charge-only-based physical phenomena. Since the discovery of giant …
in addition to charge-only-based physical phenomena. Since the discovery of giant …
Perpendicularly Magnetized MnxGa‐Based Magnetic Tunnel Junctions: Materials, Mechanisms, Performances, and Potential Applications
X Zhao, J Zhao - Advanced Materials Interfaces, 2022 - Wiley Online Library
Magnetic tunnel junctions (MTJs) exhibit a great profusion of unique functional properties,
such as nonvolatility, scalability, high endurance, and low power consumption. For this …
such as nonvolatility, scalability, high endurance, and low power consumption. For this …
[HTML][HTML] Basics and prospective of magnetic Heusler compounds
Heusler compounds are a remarkable class of materials with more than 1000 members and
a wide range of extraordinary multi-functionalities including halfmetallic high-temperature …
a wide range of extraordinary multi-functionalities including halfmetallic high-temperature …
Large perpendicular magnetic anisotropy at Fe/MgO interface
A large perpendicular magnetic anisotropy (PMA) of 1.4 MJ/m 3 was observed from ultrathin
Fe/MgO (001) bilayers grown on Cr-buffered MgO (001). The PMA strongly depends on the …
Fe/MgO (001) bilayers grown on Cr-buffered MgO (001). The PMA strongly depends on the …
Magnetoresistance effect in L1-MnGa/MgO/CoFeB perpendicular magnetic tunnel junctions with Co interlayer
The fully perpendicular magnetic tunnel junctions (p-MTJs) based on L1 0-MnGa and thin
CoFeB electrodes with MgO barrier were reported in this letter. A thin Co layer was …
CoFeB electrodes with MgO barrier were reported in this letter. A thin Co layer was …
Perpendicularly magnetized Mn x Ga films: promising materials for future spintronic devices, magnetic recording and permanent magnets
In this article, we review the recent progress in synthesis, characterization and related
spintronic devices of tetragonal Mn x Ga alloys with L 1 0 or D 0 22 ordering. After a brief …
spintronic devices of tetragonal Mn x Ga alloys with L 1 0 or D 0 22 ordering. After a brief …
Recent progress in perpendicularly magnetized Mn-based binary alloy films
In this article, we review the recent progress in growth, structural characterizations, magnetic
properties, and related spintronic devices of tetragonal Mn x Ga and Mn x Al thin films with …
properties, and related spintronic devices of tetragonal Mn x Ga and Mn x Al thin films with …
Enhanced tunnel magnetoresistance in Mn-based perpendicular magnetic tunnel junctions utilizing antiferromagnetically coupled bcc-Co-based interlayer
KZ Suzuki, T Ichinose, S Iihama, R Monma… - Applied Physics …, 2021 - pubs.aip.org
High tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs)
with tetragonal Mn-based electrodes is expected to play a key role in the realization of …
with tetragonal Mn-based electrodes is expected to play a key role in the realization of …
Brillouin zone spin filtering mechanism of enhanced tunneling magnetoresistance and correlation effects in a magnetic tunnel junction
SV Faleev, SSP Parkin, ON Mryasov - Physical Review B, 2015 - APS
The Brillouin zone spin filtering mechanism of enhanced tunneling magnetoresistance
(TMR) is described for magnetic tunnel junctions (MTJs) and studied for an example of the …
(TMR) is described for magnetic tunnel junctions (MTJs) and studied for an example of the …
Perpendicular magnetic tunnel junctions with Mn-modified ultrathin MnGa layer
Perpendicular magnetic tunnel junctions (p-MTJs) with a MgO barrier and a 1-nm-thick
MnGa electrode were investigated by inserting several monolayers (MLs) of Mn. The tunnel …
MnGa electrode were investigated by inserting several monolayers (MLs) of Mn. The tunnel …