Distributed Bragg reflectors for GaN-based vertical-cavity surface-emitting lasers
Featured Application GaN based vertical-cavity surface-emitting lasers. Abstract A
distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor …
distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor …
Improving the modulation bandwidth of GaN‐based light‐emitting diodes for high‐speed visible light communication: countermeasures and challenges
Visible light communication (VLC) has attracted widespread attention for wireless
communications. The popularity of GaN‐based light‐emitting diodes (LEDs) has also laid a …
communications. The popularity of GaN‐based light‐emitting diodes (LEDs) has also laid a …
Spectral narrowing and enhancement of directional emission of perovskite light emitting diode by microcavity
Perovskite light‐emitting diodes (PeLEDs) have attracted much attentions due to the
superior optoelectronic properties such as pure spectrum, high photoluminescence quantum …
superior optoelectronic properties such as pure spectrum, high photoluminescence quantum …
GaN-on-Si micro resonant-cavity light-emitting diodes with dielectric and metal mirrors
T Wang, X Zhang, Y Liu, W Chong, Z Huang, Z Lu… - Optical Materials, 2023 - Elsevier
Micro-LED is a new type of display technology. Its advantages are high resolution, high
brightness, long life, low power consumption and so on. However, due to the reduction in …
brightness, long life, low power consumption and so on. However, due to the reduction in …
Gallium nitride-based resonant cavity light-emitting diode with single-longitudinal-mode emission
S Zhao, B Xu, Z Zhao, D Gu, Y Zhang, W Lv, X Lv - Optics Letters, 2022 - opg.optica.org
A novel, to the best of our knowledge, gallium nitride (GaN)-based resonant cavity light-
emitting diode (RCLED) with single-longitudinal-mode light emission was demonstrated. A …
emitting diode (RCLED) with single-longitudinal-mode light emission was demonstrated. A …
Study of surface roughness of lifted-off epitaxial lateral overgrown GaN layers for the n-DBR mirror of a III-nitride vertical-cavity surface emitting laser
S Gandrothula, T Kamikawa, JS Speck… - Applied Physics …, 2021 - iopscience.iop.org
In this work, we propose using the low defect density wing region arising from epitaxial
lateral overgrowth (ELO) for the development of Group III-nitride flip-chip vertical-cavity …
lateral overgrowth (ELO) for the development of Group III-nitride flip-chip vertical-cavity …
InGaN-based orange-red resonant cavity light-emitting diodes
W Ou, Y Mei, D Iida, H Xu, M Xie… - Journal of Lightwave …, 2022 - ieeexplore.ieee.org
InGaN-based orange-red resonant cavity light-emitting diodes (RCLEDs), were fabricated by
using an AlN current-confinement aperture and double dielectric distributed Bragg reflectors …
using an AlN current-confinement aperture and double dielectric distributed Bragg reflectors …
InGaN blue resonant cavity micro-LED with RGY quantum dot layer for broad gamut, efficient displays
The technology of RGBY micro resonant cavity light emitting diodes (micro-RCLEDs) based
on quantum dots (QDs) is considered one of the most promising approaches for full-color …
on quantum dots (QDs) is considered one of the most promising approaches for full-color …
GaN-based resonant-cavity light-emitting diodes grown on Si
W Chen, M Feng, Y Tang, J Wang, J Liu, Q Sun, X Gao… - Nanomaterials, 2021 - mdpi.com
GaN-on-Si resonant-cavity light-emitting diodes (RCLEDs) have been successfully
fabricated through wafer bonding and Si substrate removal. By combining the chemical …
fabricated through wafer bonding and Si substrate removal. By combining the chemical …
[HTML][HTML] GaN 基高速蓝绿光光源的研究进展
李振浩， 汪莱， 郝智彪， 罗毅， 孙长征… - Semiconductor …, 2022 - opticsjournal.net
摘要随着射频通信频谱资源的逐渐饱和, 局域范围内高速通信亟需开辟一条新的赛道,
而可见光通信得益于光的大带宽本质和通信范围有限而频谱免许可, 是传统通信的理想补充之一 …
而可见光通信得益于光的大带宽本质和通信范围有限而频谱免许可, 是传统通信的理想补充之一 …