Area-selective atomic layer deposition (AS-ALD) is attracting increasing interest because of
its ability to enable both continued dimensional scaling and accurate pattern placement for …

This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

The pore stuffing method is studied with the objective of improving the plasma induced
damage for porous organo-silicate glass low-k dielectrics. Experiments on blanket films …

Porous organosilicate glass thin films, with k-value 2.0, were exposed to 147 nm vacuum
ultra-violet (VUV) photons emitted in a Xenon capacitive coupled plasma discharge. Strong …

Selective atomic layer deposition (ALD) using surface-controlled reactivity is attracting a
great deal of attention as a simple bottom-up patterning process that can provide both …

The present work describes the plasma etch properties of porous organo-silicate materials
at cryogenic temperature. The mechanism of plasma damage is studied by means of in situ …

A fluorocarbon polymer generated by plasma polymerization of CF 4/CH 2 F 2 used as a
model polymer for sidewall residues was subjected to ultraviolet (UV) irradiation (λ= 254 …

Abstract Using FTIR, XPS and SEM, the bonding structure of model fluorocarbon polymer
residues (6–28 nm) deposited on 90 nm low-k dielectric trench lines was determined to …

Post porosity pore protection is studied as a means for low damage integration of porous low-
k dielectrics. Homogeneous low-k densification is achieved using poly (methyl …

In back end of line (BEOL) processing of copper/dielectric stacks, the composition of the post
etch residues (PER) affects their removal by wet chemical formulations. For the removal of …