Analog and mixed circuit analysis of nanosheet FET at elevated temperatures
In this paper, for the first time, the performance of 3D Nanosheet FETs (NSFETs) is reported
in the inversion (INV), accumulation (ACC), and junctionless (JL) modes at elevated …
in the inversion (INV), accumulation (ACC), and junctionless (JL) modes at elevated …
A 7T high stable and low power SRAM cell design using QG-SNS FinFET
Abstract System on Chip (SoC) low power cache memories are in great demand. This
requires novel devices like FinFET instead of MOSFET. FinFET comes out as a multi-gate …
requires novel devices like FinFET instead of MOSFET. FinFET comes out as a multi-gate …
A single ended, single port configuration based 9 T SRAM cell for stability enhancement
The growing demand for power efficient devices and high-density memories has pushed
researchers to develop low power SRAMs. The main objective for these researches is to …
researchers to develop low power SRAMs. The main objective for these researches is to …
Design and Modeling of Quad Gate-Stacked Nano Sheets Finfet Device and Its Implementation in Digital Applications
In this paper, the nanosheet device has been designed at a 30 nm technology node using
Tanner Computer Aided Design (TCAD) tool. The device has been calibrated with the …
Tanner Computer Aided Design (TCAD) tool. The device has been calibrated with the …